CNB1304H Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Reflective photosensor Tape end sensor for DAT

Reflective Photosensors (Photo Reflectors)
CNB1304H (ON2175)
Reflective photosensor
Tape end sensor for DAT
■ Overview
CNB1304H is a sensor which consists of a high efficiency GaAs
infrared light emitting diode and a high sensitivity Si phototransistor
which are arranged together in the same direction. It detects the
beginning and end of a tape based on changes in the amount of light
reflected from a prism which is situated outside of the sensor.
■ Features
• Fast response
• Small size and light weight
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating Unit
Input (Light Reverse voltage
V_R
3
V
emitting diode) Forward current
I_F
50
mA
Power dissipation ^*1
P_D
75
mW
Output (Photo Collector-emitter voltage V_CEO
30
V
transistor) (Base open)
Emitter-collector voltage V_ECO
5
V
(Base open)
Collector current
I_C
20
mA
Collector power dissipation ^*2 P_C
100
mW
Temperature Operating ambient temperature T_opr −20 to +85 °C
Storage temperature
T_stg −30 to +100 °C
(R2.3) ^4.0±0.3
φ2.2±0.3
2-φ1.2±0.15
(4-R0.3)
Unit: mm
3.75±0.15
8.0
+0
-0.3
7.0±0.3
(C0.3)
2-φ1.2±0.15
φ1.2^+−00.3
2-0.4±0.2
(3.75)
2-0.15
+0.2
-0.1
(3.75)
4
2
1: Anode
2: Cathode
3
1
3: Collector
4: Emitter
PRSTR104-005 Package
(Note) ( ) Dimension is reference
Note) _*1: Input power derating ratio is
1.0 mW/°C at T_a ≥ 25°C.
*2: ^{Output power derating ratio is}
1.33 mW/°C at T_a ≥ 25°C.
■ Electrical-Optical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Input
Forward voltage
V_F I_F = 50 mA
characteristics Reverse current
I_R V_R = 3 V
Output
Collector-emitter cutoff current I_CEO V_CE = 10 V
characteristics (Base open)
Transfer Collector current ^*1
I_C V_CE = 5 V, I_F = 20 mA
100
characteristics Collector-emitter saturation voltage V_CE(sat) I_F = 50 mA, I_C = 0.1 mA
Rise time
t_r V_CC = 10 V, I_C = 0.5 mA, R_L = 100 Ω
Fall time
t_f
1.5 V
10.0 µA
200 nA
1 500 µA
0.5 V
6
µs
6
Note) 1. Input and output are handled electrically.
2. This product is not designed to withstand radiation
3. *1: IC measurement circuit
(Unit: mm)
2.5
1
1
CNB1304H
prism
*2: Switching time measurement circuit
Sig. in
50 Ω
V_CC
Sig. out
R_L
(Input pulse)
(Output pulse)
90%
10%
t_r
t_f
t_r: Rise time
t_f: Fall time
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHG00049BED
1