CNB1302 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Reflective Photosensor

Reflective Photosensors (Photo Reflectors)
CNB1302
Reflective Photosensor
Overview
CNB1302 is a small, thin reflective photosensor consisting of a
high efficiency GaAs infrared light emitting diode which is integrated
with a high sensitivity Si phototransistor in a single resin package.
Features
Ultraminiature, thin type : 2.7 × 3.4 mm (height : 1.5 mm)
Visible light cutoff resin is used
Fast response : t_r, t_f = 20µs (typ.)
Easy interface for control circuit
Applications
Control of motor and other rotary units
Detection of position and edge
Detection of paper, film and cloth
Start, end mark detection of magnetic tape
Mark for indicating
anode side
C0.5
13
Chip
center
Unit : mm
4-0.7
4-0.5
±0.1
24
1.8
3.4±0.3
,,,, 0.5
0.15
1 23
4
Pin connection
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Reverse voltage (DC) V_R
3
V
Input (Light
Forward current (DC)
emitting diode)
I_F
50
mA
Power dissipation
P_D*1
75
mW
Collector current
I_C
20
mA
Output (Photo Collector to emitter voltage VCEO 30
V
transistor) Emitter to collector voltage V_ECO
5
V
Collector power dissipation P_C*2
50
mW
Temperature
Operating ambient temperature T_opr –25 to +85 ˚C
Storage temperature
T_stg –30 to +100 ˚C
*1 _{Input power derating ratio is}
1.0 mW/˚C at Ta ≥ 25˚C.
*2 _{Output power derating ratio is}
0.67 mW/˚C at Ta ≥ 25˚C.
Electrical Characteristics (Ta = 25˚C)
Paramwter
Symbol
Conditions
Forward voltage (DC)
Input
characteristics ^{Reverse current (DC)}
Capacitance between terminals
V_F I_F = 50mA
I_R V_R = 3V
C_t V_R = 0V, f = 1MHz
Output characteristics Collector cutoff current
I_CEO V_CE = 10V
Collector current
I_C*1, ^*2 V_CC = 5V, I_F = 10mA, R_L = 100Ω, d = 1mm
Transfer Leakage current
I_D V_CC = 5V, I_F = 10mA, R_L = 100Ω
characteristics Response time
t_r*3 , t_f*4 V_CC = 5V, I_C = 0.1mA, R_L = 100Ω
Collector to emitter saturation voltage V_CE(sat) I_F = 20mA, I_C = 0.1mA
min typ max Unit
1.3 1.5 V
0.01 10 µA
30
pF
200 nA
90
880 µA
200 nA
20
µs
0.4 V
*1 _{IC classifications}
*2 _{Output current measurement method}
Class
Q
R
S
Evaporated Al
Glass plate
I_C (µA)
90 to 220
180 to 440
360 to 880
(t = 1mm)
*3 _{Time required for the output current to increase from 10% to 90% of its final value IF}
*4 _{Time required for the output current to decrease from 90% to 10% of its initial value}
,,, ^{VCC IC RL}
1