CNA1312K Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Transmissive Photosensors(Photo Interrupters)

Transmissive Photosensors (Photo Interrupters)
CNA1312K
Photo Interrupter
For contactless SW, object detection
Overview
CNA1312K is an ultraminiature, highly reliable transmissive
photosensor in which a high efficiency GaAs infrared light emitting
diode chip and a high sensitivity Si phototransistor chip are integrated
in a double molded resin package.
Features
Ultraminiature : 2.6 × 4.9 mm (height : 3.3 mm)
Highly precise position detection : 0.1 mm
Gap width : 2.0 mm
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Reverse voltage (DC) V_R
6
V
Input (Light
Forward current (DC)
emitting diode)
I_F
50
mA
Power dissipation
P_D*1
75
mW
Collector current
I_C
20
mA
Output (Photo Collector to emitter voltage VCEO 35
V
transistor)
Emitter to collector voltage V_ECO
6
V
Collector power dissipation P_C*2
75
mW
Operating ambient temperature T_opr –25 to +85 ˚C
Temperature Storage temperature
T_stg –40 to +100 ˚C
Soldering temperature T_sol*3 260
˚C
b side
a side
(1.8)
(1.5) With gate
a side
or b side
Unit : mm
,,,, ^{Slit width(0.4)}
4.9±0.3
Optical
SEC. A-A'
1.45
2.0±0.3 1.45
center
2.6 _(C0.5)
AB
Slit width
(0.2)
, , _{2-0.2+–00..12}
,,, _2-0.4
2-0.5
A' B'
*2.0
*3.9
SEC. B-B'
1
3
2
4
2
4
1: Anode 3: Collecter
2: Cathode 4: Emitter
1
3
(Note)
Pin connection
1. Tolerance unless otherwise specified is ±0.2
2. ( ) Dimension is reference
3. * is dimension at the root of leads
*1 _{Input power derating ratio is}
1.0 mW/˚C at Ta ≥ 25˚C.
*2 _{Output power derating ratio is}
1.0 mW/˚C at Ta ≥ 25˚C.
*3 _{Soldering time is within 5 seconds.}
more than 1mm
Soldering bath
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Input
Forward voltage (DC)
characteristics _{Reverse current (DC)}
V_F I_F = 20mA
I_R V_R = 3V
Output characteristics Collector cutoff current
I_CEO V_CE = 20V
Collector current
I_C V_CE = 5V, I_F = 5mA
40
Transfer
characteristics
Collector to emitter saturation voltage
V_CE(sat) I_F = 10mA, I_C = 40µA
Response time
t_r , t_f* V_CC = 5V, I_C = 0.1mA, R_L = 1000Ω
* _{Switching time measurement circuit}
1.2 1.4 V
10 µA
100 nA
400 µA
0.4 V
50
µs
Sig.IN
,, ^50Ω
V_CC
(Input pulse)
,, Sig.OUT
R_L
(Output pulse) _td
t_r
90%
10%
t_f
t_d : Delay time
t_r : Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
t_f : Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
1