CNA1302K Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Transmissive Photosensors (Photo lnterrupters) For contactless SW, object detection

Transmissive Photosensors (Photo lnterrupters)
CNA1302K (ON1004)
Photo lnterrupter
For contactless SW, object detection
■ Overview
Unit: mm
A
Slit width
(0.3)
CNA1302K is an ultraminiature, highly reliable transmissive
photosensor in which a high efficiency GaAs infrared light emitting
diode chip and a high sensitivity Si phototransistor chip are integrated
in a double molded resin package.
■ Features
• Ultraminiature: 4.2 mm × 5.0 mm (height: 5.2 mm)
• Fast response: t_r , t_f = 35 µs (typ.)
• Highly precise position detection: 0.15 mm
• Gap width: 2.0 mm
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating Unit
Input (Light Reverse voltage
V_R
6
V
emitting diode) Forward current
I_F
50
mA
Power dissipation ^*1
P_D
75
mW
Output (Photo Collector-emitter voltage V_CEO
35
V
transistor) (Base open)
A'
5.0
SEC. A-A'
1.5 2.0 1.5
Device
center
4.2
(C0.5)
Gate the rest
0.3 max.
(C0.3)
2-0.25
+0.1
φ1.5 -0
2-0.5
*3.8
*2.54
1: Anode
13
2: Cathode
3: Collector
24
4: Emitter
PISMR104-003 Package
(Note) 1. Tolerance unless otherwise specified is ±0.2
2. ( ) Dimension is reference
3. _* is dimension at the root of leads
4. Burrs should be less than 0.15 mm
Emitter-collector voltage V_ECO
6
V
(Base open)
Collector current
I_C
20
mA
Collector power dissipation ^*2 P_C
75
mW
Temperature Operating ambient temperature T_opr −25 to +85 °C
Storage temperature
T_stg −40 to +100 °C
Note) _*1: Input power derating ratio is 1.0 mW/°C at
T_a ≥ 25°C.
*2: ^{Output power derating ratio is 1.0 mW/°C at}
T_a ≥ 25°C.
■ Electrical-Optical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Input
Forward voltage
V_F
characteristics Reverse current
I_R
Output
Collector-emitter cutoff current I_CEO
characteristics _{(Base open)}
Transfer Collector current
I_C
characteristics Collector-emitter saturation voltage V_CE(sat)
Rise time ^*
t_r
Fall time ^*
t_f
I_F = 20 mA
V_R = 3 V
V_CE = 20 V
V_CE = 5 V, I_F = 5 mA
I_F = 10 mA, I_C = 40 µA
V_CC = 5 V, I_C = 0.1 mA
R_L = 1 000 Ω
Note) 1. Input and output are practiced by electricity.
2. This device is designed be disregarded radiation.
3. _*: Switching time measurement circuit
Min Typ Max Unit
1.2 1.4 V
10 µA
100 nA
100
400 µA
0.4 V
35
µs
35
µs
Sig. in
50Ω
V_CC
Sig. out
R_L
(Input pulse)
(Output pulse)
t_r
t_r : Rise time
90% ^tf ^{: Fall time}
10%
t_f
Publication date: April 2004
Note) The part number in the parenthesis shows conventional part number.
SHG00022BED
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