CNA1301H Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Photo Interrupter

Transmissive Photosensors (Photo Interrupters)
CNA1301H
Photo Interrupter
For contactless SW, object detection
Overview
CNA1301H is an ultraminiature, highly reliable transmissive
photosensor in which a high efficiency GaAs infrared light emitting
diode chip and a high sensitivity Si phototransistor chip are integrated
in a double molded resin package.
Features
Ultraminiature : 3.8 × 4.2 mm (height : 4.2 mm)
Highly precise position detection : 0.15 mm
Gap width : 1.4 mm
Support for thin equipment (permits direct mounting on printed
circuit board
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Input (Light
Reverse voltage (DC)
V_R
6
V
Forward current (DC)
emitting diode)
I_F
50
mA
Power dissipation
P_D*1
75
mW
Collector current
I_C
20
mA
Output (Photo Collector to emitter voltage VCEO 35
V
transistor)
Emitter to collector voltage V_ECO
6
V
Collector power dissipation P_C*2
75
mW
Temperature
Operating ambient temperature T_opr –25 to +85 ˚C
Storage temperature
T_stg – 40 to +100 ˚C
1.2
2.0±0.5
Optical
center
,,^2.0 ,,,
4.2
3-1.4
A
Unit : mm
Slit width
(0.3)
,,,,, SEC. A-A'
3.8
(C0.5)
2-1.7±0.1 ^A'
1.5±0.1
Not solderd
1.0 max.
Resin ¹
, _{the rest}
,,₂
2-ø0.7±0.1
3
,,,₄
2
1
Pin connection
4
3
1: Anode 3: Collector
(Note)
2: Cathode 4: Emitter
1. Tolerance unless otherwise specified is ±0.2
2. ( ) Dimension is reference
*1 _{Input power derating ratio is}
1.0 mW/˚C at Ta ≥ 25˚C.
*2 _{Output power derating ratio is}
1.0 mW/˚C at Ta ≥ 25˚C.
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Input
Forward voltage (DC)
characteristics _{Reverse current (DC)}
V_F I_F = 20mA
I_R V_R = 3V
Output characteristics Collector cutoff current
I_CEO V_CE = 20V
Collector current
I_C V_CE = 5V, I_F = 5mA
100
Transfer
characteristics
Collector to emitter saturation voltage
V_CE(sat) I_F = 10mA, I_C = 40µA
Response time
t_r , t_f* V_CC = 5V, I_C = 0.1mA, R_L = 1000Ω
* _{Switching time measurement circuit}
1.2 1.4 V
10 µA
100 nA
1300 µA
0.4 V
35
µs
Sig.IN
,, ^50Ω
V_CC
(Input pulse)
,, ^{Sig.OUT (Output pulse)}
R_L
t_d
t_r
90%
10%
t_f
t_d : Delay time
t_r : Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
t_f : Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
1