CNA1014H Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Photo Interrupter

Transmissive Photosensors (Photo lnterrupters)
CNA1014H (ON1387)
Photo Interrupter
For contactless SW, object detection
Unit: mm
■ Overview
CNA1014H is a transmittive photosensor series in which a high
efficiency GaAs infrared light emitting diode is used as the light
emitting element, and a high sensitivity phototransistor is used as
the light detecting element. The two elements are arranged so as to
face each other, and objects passing between them are detected.
■ Features
• Highly precise position detection: 0.3 mm
• With attachment positioning boss
• Fast response: t_r , t_f = 5 µs (typ.)
■ Adsolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating Unit
Input (Light Reverse voltage
V_R
3
V
emitting diode) Forward current
I_F
50
mA
Power dissipation ^*1
P_D
75
mW
Output (Photo Collector-emitter voltage V_CEO
30
V
transistor) (Base open)
12.0
3.0±0.1
A
Device
Center
5.0
0.5±0.1
(C1)
A' _{4-0.45±0.15}
30°
(7.6)
2
3
1.23
4-0.45±0.15
(2.54)
SEC. A-A'
φ1.5±0.05
(φ2)
1
4
1: Anode
2: Cathode
3: Collector
4: Emitter
PISTR104-025 Package
(Note) 1. Tolerance unless otherwise specified is ±0.3
2. ( ) Dimension is reference
Emitter-collector voltage V_ECO
5
V
(Base open)
Collector current
I_C
20
mA
Collector power dissipation ^*2 P_C
100
mW
Temperature Operating ambient temperature T_opr −25 to +85 °C
Storage temperature
T_stg −40 to +100 °C
Note) _*1: Input power derating ratio is 1.0 mW/°C at T_a ≥ 25°C.
*2: ^{Output power derating ratio is 1.33 mW/°C at T}a ^{≥ 25°C.}
■ Electrical-Optical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Input
Forward voltage
V_F
characteristics Reverse current
I_R
Output
Collector-emitter cutoff current I_CEO
characteristics _{(Base open)}
Transfer Collector current
I_C
characteristics Collector-emitter saturation voltage V_CE(sat)
Rise time ^*
t_r
Fall time ^*
t_f
I_F = 20 mA
V_R = 3 V
V_CE = 10 V
V_CE = 5 V, I_F = 20 mA
I_F = 40 mA, I_C = 1 mA
V_CC = 5 V, I_C = 1 mA
R_L = 100 Ω
1.25 1.40 V
10 µA
10 200 nA
1.5
12.0 mA
0.4 V
5
µs
5
µs
Note) 1. Input and output are practiced by electricity.
2. This device is designed be disregarded radiation.
3. _*: Switching time measurement circuit
Sig. in
V_CC
(Input pulse)
50 Ω
Sig. out _{(Output pulse)}
R_L
t_r : Rise time
90% ^tf ^{: Fall time}
10%
t_r
t_f
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2001
SHG00059BED
1