CNA1012K Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Photo lnterrupter For contactless SW, object detection

Transmissive Photosensors (Photo lnterrupters)
CNA1012K (ON1114)
Photo lnterrupter
For contactless SW, object detection
Unit: mm
■ Overview
CNA1012K is a photocoupler in which a high efficiency GaAs
infrared light emitting diode is used as the light emitting element, and
a high sensitivity phototransistor is used as the light detecting ele-
ment. The two elements are arranged so as to face each other, and
objects passing between them are detected.
■ Features
• Highly precise position detection: 0.3 mm
• Wide gap between emitting and detecting elements, suitable for
thick plate detection
• Fast response: t_r , t_f = 6 µs (typ.)
• Small output current variation against change in temperature
• Large output current
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating Unit
Input (Light Reverse voltage
V_R
3
V
emitting diode) Forward current
I_F
50
mA
Power dissipation ^*1
P_D
75
mW
Output (Photo Collector-emitter voltage V_CEO
30
V
transistor) (Base open)
0.45±0.1
Mark for indicating
LED side
13.0±0.3
5.0±0.2
A
0.45±0.1
2-R0.5
A'
(10.0)
2-0.45±0.2
(2.54)
Device
center
SEC. A-A'
2
3
1: Anode
1
4
2: Cathode
3: Collector
4: Emitter
PISTR104-013 Package
(Note) ( ) Dimension is reference
Emitter-collector voltage V_ECO
5
V
(Base open)
Collector current
I_C
20
mA
Collector power dissipation ^*2 P_C
100
mW
Temperature Operating ambient temperature T_opr −25 to +85 °C
Storage temperature
T_stg −30 to +100 °C
Note) _*1: Input power derating ratio is 1.0 mW/°C at
T_a ≥ 25°C.
*2: ^{Output power derating ratio is 1.34 mW/°C}
at T_a ≥ 25°C.
■ Electrical-Optical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Input
Forward voltage
V_F
characteristics Reverse current
I_R
Output
Collector-emitter cutoff current I_CEO
characteristics (Base open)
I_F = 50 mA
V_R = 3 V
V_CE = 10 V
1.2 1.5 V
10 µA
200 nA
Collector-emitter capacitance C_C
Transfer Collector current
I_C
characteristics Collector-emitter saturation voltage V_CE(sat)
Rise time ^*
t_r
Fall time ^*
t_f
V_CE = 10 V, f = 1 MHz
V_CE = 10 V, I_F = 20 mA
I_F = 50 mA, I_C = 0.1 mA
V_CC = 10 V, I_C = 1 mA
R_L = 100 Ω
5
pF
0.7
mA
0.3 V
6
µs
6
µs
Note) 1. Input and output are practiced by electricity.
2. This device is designed be disregarded radiation.
3. _*: Switching time measurement circuit
Sig. in
50Ω
V_CC
Sig. out
R_L
(Input pulse)
(Output pulse)
t_r : Rise time
90% tf : Fall time
10%
t_r
t_f
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHG00019BED
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