CNA1006N Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Photo Interrupter

Transmissive Photosensors (Photo Interrupters)
CNA1006N
Photo Interrupter
For contactless SW, object detection
Overview
CNA1006N is a transmissive photosensor in which a high
efficiency GaAs infrared light emitting diode is used as the light
emitting element, and a high sensitivity phototransistor is used as
the light detecting element. The two elements are arranged so as to
face each other, and objects passing between them are detected.
Features
Highly precise position detection : 0.3 mm
Gap width : 3 mm
The type direetly attached to PCB (with positioning pins and
fixing hooks)
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Input (Light
Reverse voltage (DC)
V_R
3
V
Forward current (DC)
emitting diode)
I_F
50
mA
Power dissipation
P_D*1
75
mW
Collector current
I_C
20
mA
Output (Photo Collector to emitter voltage VCEO 30
V
transistor)
Emitter to collector voltage V_ECO
5
V
Collector power dissipation P_C*2 100 mW
Temperature
Operating ambient temperature T_opr –25 to +85 ˚C
Storage temperature
T_stg – 30 to +100 ˚C
1.5
16.6
11.8
3.0^{+–00..32}
A
Optical
center
Unit : mm
Slit width
,,,,^1.5±0.1
SEC A-A'
2-ø1.0
+0
–0.05
A'
4-0.45
(7.6)
15.0
12.6±0.3
23
2-1.5
2
(2.54)
2-3.3
3
1
4
Pin connection
1
4
1: Anode 3: Collecter
(Note)
2: Cathode 4: Emitter
1. Tolerance unless otherwise specified is ±0.2
2. ( ) Dimension is reference
3. Fitting strength is 2N min. (Static load)
*1 _{Input power derating ratio is}
1.0 mW/˚C at Ta ≥ 25˚C.
*2 _{Output power derating ratio is}
1.33 mW/˚C at Ta ≥ 25˚C.
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
Input
Forward voltage (DC)
characteristics _{Reverse current (DC)}
V_F I_F = 20mA
I_R V_R = 3V
Output characteristics Collector cutoff current
I_CEO V_CE = 10V
Collector current
I_C V_CE = 5V, I_F = 20mA
Transfer
characteristics
Collector to emitter saturation voltage
V_CE(sat) I_F = 40mA, I_C = 1mA
Response time
t_r , t_f* V_CC = 5V, I_C = 1mA, R_L = 100Ω
* _{Switching time measurement circuit}
min typ max Unit
1.25 1.4 V
10 µA
10 200 nA
0.7
14 mA
0.4 V
5
µs
Sig.IN
,, ^50Ω
V_CC
(Input pulse)
,, ^{Sig.OUT (Output pulse)}
R_L
t_d
t_r
90%
10%
t_f
t_d : Delay time
t_r : Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
t_f : Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
1