2SK665 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon N-Channel MOS FET

Silicon MOS FETs (Small Signal)
2SK665
Silicon N-Channel MOS FET
For switching
s Features
q High-speed switching
q Small drive current owing to high input inpedance
q High electrostatic breakdown voltage
unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
V_DS
V_GSO
I_D
I_DP
P_D
T_ch
T_stg
20
V
8
V
100
mA
200
mA
150
mW
150
°C
−55 to +150
°C
0.2±0.1
1: Gate
2: Source
3: Drain
EIAJ: SC-70
S-Mini Type Package (3-pin)
Marking Symbol: 3O
Internal Connection
D
R₁
G
R₂
S
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current I_DSS
V_DS = 10V, V_GS = 0
Gate to Source leakage current I_GSS
V_GS = 8V, V_DS = 0
40
Drain to Source breakdown voltage V_DSS
I_D = 100µA, V_GS = 0
20
Gate threshold voltage
V_th
I_D = 100µA, V_DS = V_GS
1.5
Drain to Source ON-resistance R_DS(on)*3 I_D = 20mA, V_GS = 5V
Forward transfer admittance
| Y_fs |
I_D = 20mA, V_DS = 5V, f = 1kHz
20
High level output voltage
V_OH
V_DD = 5V, V_GS = 1V, R_L = 200Ω
4.5
Low level output voltage
Input resistance
Turn-on time
Turn-off time
V_SL
V_DD = 5V, V_GS = 5V, R_L = 200Ω
R₁ + R_2*1
100
t_on*2
V_DD = 5V, V_GS = 0 to 5V, R_L = 200Ω
t_off*2
V_DD = 5V, V_GS = 5 to 0V, R_L = 200Ω
*1 _{Resistance ratio R1/R2 = 1/50} *2 _{ton, toff measurement circuit} *3 _{Pulse measurement}
10
µA
80
µA
V
3.5
V
50
Ω
mS
V
1
V
200
kΩ
1
µs
1
µs
V_GS = 5V
50Ω
V_{out 200Ω}
V_in
V_DD = 5V
V_out
10%
90%
10%
90%
t_on
t_off
1