2SK664 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon N-Channel MOS FET

Silicon MOS FETs (Small Signal)
2SK664
Silicon N-Channel MOS FET
For switching
s Features
q High-speed switching
q S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
V_DSS
V_GSO
I_D
I_DP
P_D
T_ch
T_stg
50
V
8
V
100
mA
200
mA
150
mW
150
°C
−55 to +150
°C
0.2±0.1
1: Gate
2: Source
3: Drain
EIAJ: SC-70
S-Mini Type Package (3-pin)
Marking Symbol: 3N
Internal Connection
D
G
S
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current I_DSS
V_DS = 10V, V_GS = 0
10
µA
Gate to Source leakage current I_GSS
V_GS = 8V, V_DS = 0
50
µA
Drain to Source breakdown voltage V_DSS
I_D = 100µA, V_GS = 0
50
V
Gate threshold voltage
V_th
I_D = 100µA, V_DS = V_GS
1.5
3.5
V
Drain to Source ON-resistance R_DS(on) I_D = 20mA, V_GS = 5V
50
Ω
Forward transfer admittance
| Y_fs |
I_D = 20mA, V_DS = 5V, f = 1kHz
20
mS
Input capacitance (Common Source) C_iss
15
pF
Output capacitance (Common Source) C_oss
V_DS = 5V, V_GS = 0, f = 1kHz
5
pF
Reverse transfer capacitance (Common Source) C_rss
1
pF
Turn-on time
t_on*
V_DD = 5V, V_GS = 0 to 5V, R_L = 200Ω
10
ns
Turn-off time
t_off*
V_DD = 5V, V_GS = 5 to 0V, R_L = 200Ω
20
ns
* _{ton, toff measurement circuit}
V_GS = 5V
50Ω
V_{out 200Ω}
V_in
V_DD = 5V
V_out
10%
90%
10%
90%
t_on
t_off
1