2SK662 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon N-Channel Junction FET

Silicon Junction FETs (Small Signal)
2SK662
Silicon N-Channel Junction FET
For low-frequency amplification
s Features
q High mutual conductance g_m
q Low noise type
q S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source voltage
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Junction temperature
Storage temperature
V_DSX
V_GDO
I_D
I_G
P_D
T_j
T_stg
30
V
−30
V
20
mA
10
mA
150
mW
125
°C
−55 to +125
°C
unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
0.2±0.1
1: Source
2: Drain
3: Gate
EIAJ: SC-70
S-Mini Type Package (3-pin)
Marking Symbol (Example): 1O
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current
Gate to Source leakage current
Gate to Source cut-off voltage
I_DSS*
I_GSS
V_GSC
V_DS = 10V, V_GS = 0
V_GS = −30V, V_DS = 0
V_DS = 10V, I_D = 10µA
0.5
− 0.1
12
mA
−100
nA
−1.5
V
V_DS = 10V, I_D = 0.5mA, f = 1kHz
4
Mutual conductance
g_m
mS
V_DS = 10V, V_GS = 0, f = 1kHz
4
Input capacitance (Common Source) C_iss
Reverse transfer capacitance (Common Source) C_rss
V_DS = 10V, V_GS = 0, f = 1MHz
14
pF
3.5
pF
Noise figure
V_DS = 30V, I_D = 1mA, G_V = 80dB
NV
60
mV
R_g = 100kΩ, Function = FLAT
* _{IDSS rank classification}
Runk
P
I_DSS (mA)
Marking Symbol
0.5 to 3
1OP
Q
2 to 6
1OQ
R
4 to 12
1OR
1