2SK657 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon N-Channel MOS FET

Silicon MOS FETs (Small Signal)
2SK657
Silicon N-Channel MOS FET
For switching
s Features
q High-speed switching
q M type package, allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
6.9±0.1
1.5
1.5 R0.9
R0.9
unit: mm
2.5±0.1
1.0
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
V_DSS
V_GSO
I_D
I_DP
P_D
T_ch
T_stg
50
V
8
V
±100
mA
±200
mA
400
mW
150
°C
−55 to +150
°C
0.85
0.55±0.1
0.45±0.05
3
2
1
2.5 2.5
1: Gate
2: Drain
3: Source
EIAJ: SC-71
M Type Mold Package
Internal Connection
D
G
S
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current I_DSS
V_DS = 10V, V_GS = 0
10
µA
Gate to Source leakage current I_GSS
V_GS = 8V, V_DS = 0
50
µA
Drain to Source breakdown voltage V_DSS
I_D = 100µA, V_GS = 0
50
V
Gate threshold voltage
V_th
I_D = 100µA, V_DS = V_GS
1.5
3.5
V
Drain to Source ON-resistance R_DS(on) I_D = 20mA, V_GS = 5V
50
Ω
Forward transfer admittance
| Y_fs |
I_D = 20mA, V_DS = 5V, f = 1kHz
20
mS
Input capacitance (Common Source) C_iss
15
pF
Output capacitance (Common Source) C_oss
V_DS = 5V, V_GS = 0, f = 1MHz
6
pF
Reverse transfer capacitance (Common Source) C_rss
1.2
pF
Turn-on time
t_on*
V_DD = 5V, V_GS = 0 to 5V, R_L = 200Ω
10
ns
Turn-off time
t_off*
V_DD = 5V, V_GS = 5 to 0V, R_L = 200Ω
20
ns
* _{ton, toff measurement circuit}
V_GS = 5V
50Ω
V_{out 200Ω}
V_in
V_DD = 5V
V_out
10%
90%
10%
90%
t_on
t_off
1