2SK65 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon N-Channel Junction FET

Silicon Junction FETs (Small Signal)
2SK65
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
s Features
q Diode is connected between gate and source
q Low noise voltage
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source voltage
Gate to Drain voltage
Drain to Source current
Drain to Gate current
Gate to Source current
Allowable power dissipation
Operating ambient temperature
Storage temperature
V_DSO
V_GDO
I_DSO
I_DGO
I_GSO
P_D
T_opr
T_stg
12
V
−12
V
2
mA
2
mA
2
mA
20
mW
−10 to +70
°C
−20 to +150
°C
4.5±0.1
unit: mm
2.0±0.2
1.0
0.45±0.05
2.54
123
0.8±0.1
1: Drain
2: Gate
3: Source
S Type Package
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current I_DSS*
V_DS = 4.5V, V_GS = 0, R_S = 2.2kΩ ± 1% 0.04
0.8
mA
Mutual conductance
Noise figure
Voltage gain
V_DS = 4.5V, V_GS = 0
g_m
R_S = 2.2kΩ ± 1%, f = 1kHz
300
500
µS
NV
V_DS = 4.5V, R_S = 2.2kΩ ± 1%
C_G = 10pF, A-curve
4
µV
G_V1*
V_DS = 4.5V, R_S = 2.2kΩ ± 1%
−10
dB
C_G = 10pF, e_G = 100mV, f = 70Hz
G_V2*
V_DS = 12V, R_S = 2.2kΩ ± 1%
C_G = 10pF, e_G = 100mV, f = 70Hz
−9.5
dB
G_V3*
V_DS = 1V, R_S = 2.2kΩ ± 1%
−11
dB
C_G = 10pF, e_G = 100mV, f = 70Hz
* _{IDSS rank classification and GV value}
Runk
P
Q
I_DSS (mA)
G_V1 (dB)
G_V2 (dB)
∆| G_V1 − G_V2 | (dB)
0.04 to 0.2
> −13
> −12
<3
0.15 to 0.8
> −12
> −11
<3
1