2SK601 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon N-Channel MOS FET

Silicon MOS FETs (Small Signal)
2SK601
Silicon N-Channel MOS FET
For switching
unit: mm
s Features
q Low ON-resistance R_DS(on)
q High-speed switching
q Allowing to be driven directly by CMOS and TTL
q Mini-power type package, allowing downsizing of the sets and
automatic insertion through the tape/magazine packing.
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source voltage
V_DS
80
V
Gate to Source voltage
V_GSO
20
V
Drain current
I_D
±0.5
A
Max drain current
I_DP
Allowable power dissipation
P_D*
±1
A
1
W
Channel temperature
Storage temperature
T_ch
150
°C
T_stg
−55 to +150
°C
* _{PC board: Copper foil of the drain portion should have a area of 1cm}2 _or
more and the board thickness should be 1.7mm.
s Electrical Characteristics (Ta = 25°C)
4.5±0.1
1.6±0.2
1.5±0.1
45˚
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
0.4±0.04
marking
1: Gate
2: Drain
3: Source
EIAJ: SC-62
Mini-Power Type Package (3-pin)
Marking Symbol: O
Parameter
Symbol
Conditions
Drain to Source cut-off current I_DSS
Gate to Source leakage current I_GSS
Drain to Source breakdown voltage V_DSS
Gate threshold voltage
Drain to Source ON-resistance
V_th
R_DS(on)*1
Forward transfer admittance
| Y_fs |
Input capacitance (Common Source) C_iss
Output capacitance (Common Source) C_oss
Reverse transfer capacitance (Common Source) C_rss
Turn-on time
t_on*2
Turn-off time
t_off*2
*1 _{Pulse measurement}
*2 _{ton, toff measurement circuit}
V_DS = 60V, V_GS = 0
V_GS = 20V, V_DS = 0
I_DS = 100µA, V_GS = 0
I_D = 1mA, V_DS = V_GS
I_D = 0.5A, V_GS = 10V
I_D = 0.2A, V_DS = 15V, f = 1kHz
V_DS = 10V, V_GS = 0, f = 1MHz
min
typ
max
Unit
10
µA
0.1
µA
80
V
1.5
3.5
V
2
4
Ω
300
mS
45
pF
30
pF
8
pF
15
ns
20
ns
V_in = 10V
t = 1µS
f = 1MHZ
50Ω
V_out
V_in
68Ω
V_DD = 30V
V_out
10% ^Vin
90% _Vout
t_on
10%
90%
t_off
1