2SK3938 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon N-channel MOSFET For switching circuits

Silicon MOSFETs (Small Signal)
2SK3938
Silicon N-channel MOSFET
For switching circuits
 Features
 High-speed switching
 SSSMini type package, allowing downsizing of the equipment and　
automatic insertion through the tape packing
0.33^{+–00..0025}
3
Unit: mm
0.10^{+–00..0025}
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Drain-source surrender voltage
Gate-source surrender voltage
V_DSS
30
V
V_GSS
±12
V
Drain current
I_D
100
mA
Peak drain current
Power dissipation
Channel temperature
Storage temperature
I_DP
200
mA
P_D
100
mW
T_ch
125
°C
T_stg –55 to +125 °C
0.23^{+–00..0025}
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5°
1: Gate
2: Source
3: Drain
SSSMini3-F1 Package
Marking Symbol: 6U
 Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
V_DSS
I_DSS
I_GSS
I_D = 10 µA, V_GS = 0
V_DS = 20 V, V_GS = 0
V_GS = ±10 V, V_DS = 0
30
V
1.0
µA
±10
µA
Gate threshold voltage
V_TH I_D = 1.0 µA, V_DS = 3 V
0.5
1.0
1.5
V
Drain-source ON resistance
Forward transfer admittance
R_DS(on)
Y_fs
I_D = 10 mA, V_GS = 2.5 V
I_D = 10 mA, V_GS = 4.0 V
I_D = 10 mA, V_DS = 3 V, f = 1 kHz
7
12
Ω
5
8
20
55
mS
Short-circuit forward transfer capacitance
(Common source)
C_iss
12
pF
Short-circuit output capacitance
(Common source)
C_oss V_DS = 3 V, V_GS = 0, f = 1 MHz
10
pF
Reverse transfer capacitance
(Common source)
C_rss
6
pF
Turn-on time ^*
Turn-off time ^*
t_on V_DD = 3 V, V_GS = 0 V to 3 V, I_D = 10 mA
350
ns
t_off V_DD = 3 V, V_GS = 3 V to 0 V, I_D = 10 mA
350
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : t_on , t_off measurement circuit
V_OUT
290 Ω
90%
V_GS
10%
V_GS = 0 V to 3 V
50 Ω
100 µF
V_DD = 3 V
V_OUT
10%
90%
t_on
t_off
Publication date: December 2004
SJF00043AED
1