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2SK3637 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon N-channel power MOSFET
Power MOSFETs
2SK3637
Silicon N-channel power MOSFET
For PDP/For high-speed switching
15.5±0.5 φ 3.2±0.1
Unit: mm
3.0±0.3
5˚
5˚
■ Features
• Low on-resistance, low Qg
• High avalanche resistance
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Drain-source surrender voltage VDSS
200
V
Gate-source surrender voltage
VGSS
±30
V
Drain current
ID
50
A
Peak drain current
IDP
200
A
Avalanche energy capability * EAS
2 000
mJ
Power
PD
100
W
dissipation
Ta = 25°C
3
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
Note) *: L = 0.8 mH, IL = 50 A, VDD = 100 V, 1 pulse, Ta = 25°C
5˚
(4.0)
5˚
2.0±0.2
5˚
1.1±0.1
0.7±0.1
5.45±0.3
10.9±0.5
5˚
12 3
1: Gate
2: Drain
3: Source
TOP-3E-A1 Package
Internal Connection
D
G
S
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Gate-drain surrender voltage
Diode forward voltage
Gate threshold voltage
Drain-source cutoff current
Gate-source cutoff currentt
Drain-source on resistance
Forward transfer admittance
Short-circuit forward transfer capacitance
(Common-source)
VDSS
VDSF
Vth
IDSS
IGSS
RDS(on)
Yfs
Ciss
ID = 1 mA, VGS = 0
IDR = 50 A, VGS = 0
VDS = 25 V, ID = 10 mA
VDS = 160 V, VGS = 0
VGS = ±30 V, VDS = 0
VGS = 10 V, ID = 25 A
VDS = 25 V, ID = 25 A
VDS = 25 V, VGS = 0, f = 1 MHz
200
V
−1.5
V
2
4
V
100 µA
±1
µA
29
40
mΩ
15 30
S
4 550
pF
Short-circuit output capacitance
Coss
(Common-source)
750
pF
Reverse transfer capacitance
Crss
(Common-source)
75
pF
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse recovery time
Reverse recovery charge
td(on)
tr
td(off)
tf
trr
Qrr
VDD = 100 V, ID = 25 A
RL = 4 Ω, VGS = 10 V
L = 230 µH, VDD = 100 V
IDR = 25 A, di /dt = 100 A/ µs
50
ns
125
ns
390
ns
140
ns
210
ns
820
nC
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2004
SJG00035AED
1