2SK3560 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon N-channel power MOSFET For PDP/For high-speed switching

Power MOSFETs
2SK3560
Silicon N-channel power MOSFET
For PDP/For high-speed switching
■ Features
• Low on-resistance, low Q_g
• High avalanche resistance
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Drain-source surrender voltage V_DSS
230
V
Gate-source surrender voltage
V_GSS
±30
V
Drain current
I_D
30
A
Peak drain current
I_DP
120
A
Power
P_D
50
W
dissipation
T_a = 25°C
3
Channel temperature
T_ch
150
°C
Storage temperature
T_stg
−55 to +150
°C
10.5±0.3
Unit: mm
4.6±0.2
1.4±0.1
1.4±0.1
0.8±0.1
2.54±0.3
2.5±0.2
0 to 0.3
123
(10.2)
(8.9)
1: Gate
2: Drain
3: Source
TO-220C-G1 Package
Internal Connection
D
G
S
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Gate-drain surrender voltage
Diode forward voltage
Gate threshold voltage
Drain-source cutoff current
Gate-source cutoff currentt
Drain-source on resistance
Forward transfer admittance
Short-circuit forward transfer capacitance
(Common-source)
V_DSS
V_DSF
V_th
I_DSS
I_GSS
R_DS(on)
Y_fs
C_iss
I_D = 1 mA, V_GS = 0
I_DR = 30 A, V_GS = 0
V_DS = 25 V, I_D = 1 mA
V_DS = 184 V, V_GS = 0
V_GS = ±30 V, V_DS = 0
V_GS = 10 V, I_D = 15 A
V_DS = 25 V, I_D = 15 A
V_DS = 25 V, V_GS = 0, f = 1 MHz
230
V
−1.5
V
2
4
V
100 µA
±1
µA
55
74
mΩ
8
19
S
2 330
pF
Short-circuit output capacitance
C_oss
(Common-source)
356
pF
Reverse transfer capacitance
C_rss
(Common-source)
44
pF
Turn-on delay time
Rise time
Turn-off delay time
t_d(on)
t_r
t_d(off)
V_DD ≈ 100 V, I_D = 15 A
R_L ≈ 6.7 Ω, V_GS = 10 V
39
ns
37
ns
221
ns
Fall time
Reverse recovery time
Reverse recovery charge
t_f
t_rr
L = 230 µH, V_DD = 100 V
Q_rr I_DR = 15 A, di /dt = 100 A/ µs
46
ns
164
ns
853
nC
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2004
SJG00033AED
1