2SK3546G Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon Jumction FETs Small Signal

This product complies with the RoHS Directive (EU 2002/95/EC).
Silicon Junction FETs (Small Signal)
2SK3546G
Silicon N-Channel MOSFET
For switching
■ Features
• High-speed switching
/ _{• Wide frequency band}
e _{■ Absolute Maximum Ratings Ta = 25°C}
e. _Parameter
Symbol Rating Unit
c _{tag Drain-source voltage}
n ^d le ^s Gate-source voltage (Drain open)
yc _{Drain current}
a ^e lifec Peak drain current
ct _{Power dissipation}
n ^u _{rodu Channel temperature}
P _{Storage temperature}
V_DS
50
V
V_GSO
±7
V
I_D
100
mA
I_DP
200
mA
P_D
125
mW
T_ch
125
°C
T_stg −55 to +150 °C
■ Package
• Code
SSMini3-F3
• Marking Symbol: 5F
• Pin Name
1: Gate
2: Source
3: Drain
te ^tin_ing ^foutrype _{n. ■ Electrical Characteristics Ta = 25°C ± 3°C}
in ^{n llow ce atio Parameter}
Symbol
Conditions
Min Typ Max Unit
fo an pe ^{ed rm Drain-source surrender voltage}
a ^{o ludes inten e ty typ info n/ Drain-source cutoff current}
c _ed ^inc _ed ^ma _tenanc ^{tinued type test .jp/e Gate-source cutoff current}
u ^{n in on d t la .co Gate threshold voltage}
M _is tin ^{la a isc ue ou nic Drain-source ON resistance}
V_DSS
I_DSS
I_GSS
V_th
R_DS(on)
iscon ^{p m ned d contin RL ab anaso Forward transfer admittance}
la ^{is U .p Short-circuit forward transfer capacitance}
e/D ^{p d ing icon (Common source)}
Y_fs
C_iss
I_D = 10 µA, V_GS = 0
V_DS = 50 V, V_GS = 0
V_GS = ±7 V, V_DS = 0
I_D = 1.0 µA, V_DS = 3 V
I_D = 10 mA, V_GS = 2.5 V
I_D = 10 mA, V_GS = 4.0 V
I_D = 10 mA, V_DS = 3 V, f = 1 kHz
V_DS = 3 V, V_GS = 0, f = 1 MHz
50
V
1.0
µA
±5.0 µA
0.9 1.2 1.5
V
8
15
Ω
6
12
20 60
mS
12
pF
D_{anc llow m Short-circuit output capacitance}
ten ^{fo .se (Common source)}
C_oss V_DS = 3 V, V_GS = 0, f = 1 MHz
7
pF
in ^{it w Reverse transfer capacitance}
Ma e ^{vis ://ww (Common source)}
C_rss V_DS = 3 V, V_GS = 0, f = 1 MHz
3
pF
as ttp ^{Turn-on time *}
Ple ^{h Turn-off time *}
t_on
V_DD = 3 V, V_GS = 0 V to 3 V, R_L = 470 Ω
200
ns
t_off
V_DD = 3 V, V_GS = 3 V to 0 V, R_L = 470 Ω
200
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: t_on, t_off test circuit
V_{OUT 470 Ω}
90%
V_GS = 3.0 V
50 Ω
V_DD = 3 V
V_IN
V_OUT
10%
10%
90%
t_on
t_off
Publication date: June 2007
SJF00069AED
1