2SK3539 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon N-channel MOSFET

Silicon MOSFETs (Small Signal)
2SK3539
Silicon N-channel MOSFET
For switching
■ Features
• High-speed switching
• Wide frequency band
• Gate protection diode built-in
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Drain-source voltage
Gate-source voltage (Drain open)
Drain current
Peak drain current
Power dissipation
Channel temperature
Storage temperature
V_DS
50
V
V_GSO
±7
V
I_D
100
mA
I_DP
200
mA
P_D
150
mW
T_ch
150
°C
T_stg −55 to +150 °C
0.3^{+–00..01}
3
Unit: mm
0.15^{+–00..0150}
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
10˚
1: Gate
2: Source
3: Drain
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: 5F
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Drain-source surrender voltage
Drain-source cutoff current
Gate-Source cutoff current
Gate threshold voltage
Drain-source ON resistance
Forward trancfer admitance
Short-circuit forward transfer
capacitance (Common source)
V_DSS
I_DSS
I_GSS
V_th
R_DS(on)
Y_fs
C_iss
I_D = 10 µA, V_GS = 0
V_DS = 50 V, V_GS = 0
V_GS = ±7 V, V_DS = 0
I_D = 1.0 µA, V_DS = 3 V
I_D = 10 mA, V_GS = 2.5 V
I_D = 10 mA, V_GS = 4.0 V
I_D = 10 mA, V_DS = 3 V, f = 1 kHz
V_DS = 3 V, V_GS = 0, f = 1 MHz
50
V
1.0
µA
±5.0 µA
0.9 1.2 1.5
V
8
15
Ω
6
12
20 60
mS
12
pF
Short-circuit output capacitance (Common source)
C_oss
7
pF
Reverse transfer capacitance (Common source) C_rss
3
pF
Turn-on time ^*
t_on
V_DD = 3 V, V_GS = 0 V to 3 V, R_L = 470 Ω
200
ns
Turn-off time ^*
t_off
V_DD = 3 V, V_GS = 3 V to 0 V, R_L = 470 Ω
200
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: t_on , t_off test circuit
V_{OUT 470 Ω}
90%
V_GS = 3.0 V
50 Ω
V_DD = 3 V
V_IN
V_OUT
10%
10%
90%
t_on
t_off
Publication date: January 2004
SJF00035BED
1