2SK3494 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – N-channel enhancement mode MOSFET

Power MOSFETs
2SK3494
N-channel enhancement mode MOSFET
■ Features
• Low on-resistance, low Q_g
• High avalanche resistance
■ Applications
• For PDP
• For high-speed switching
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Avalanche energy capability ^*
V_DSS
250
V
V_GSS
±30
V
I_D
20
A
I_DP
80
A
EAS
657
mJ
Power dissipation
Channel temperature
Storage temperature
P_D
50
W
T_a = 25°C
1.4
T_ch
150
°C
T_stg −55 to +150 °C
Note) *: L = 2.79 mH, I_L = 20 A, V_DD = 50 V, 1 pulse, T_a = 25°C
10.5±0.3
Unit: mm
4.6±0.2
1.4±0.1
1.4±0.1
0.8±0.1
2.54±0.3
2.5±0.2
0 to 0.3
123
(10.2)
(8.9)
1: Gate
2: Drain
3: Source
TO-220C-G1 Package
Marking Symbol: K3494
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Drain-source surrender voltage
V_DSS
Gate threshold voltage
V_th
Drain-source cutoff current
I_DSS
Gate-source cutoff current
I_GSS
Drain-source ON resistance
R_DS(on)
Forward transfer admittance
Y_fs
Short-circuit forward transfer capacitance C_iss
(Common-source)
I_D = 1 mA, V_GS = 0
V_DS = 10 V, I_D = 1 mA
V_DS = 200 V, V_GS = 0
V_GS = ±30 V, V_DS = 0
V_GS = 10 V, I_D = 10 A
V_DS = 10 V, I_D = 10 A
V_DS = 25 V, V_GS = 0, f = 1 MHz
Short-circuit output capacitance
C_oss
(Common-source)
Reverse transfer capacitance
C_rss
(Common-source)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t_d(on)
T_r
t_d(off)
t_f
V_DD ≈ 100 V, I_D = 10 A
R_L = 10 Ω, V_GS = 10 V
Publication date: March 2004
SJG00037AED
Min Typ Max Unit
250
V
2.0
4.0
V
10
µA
±1
µA
82 105 mΩ
7
14
S
2 450
pF
356
pF
40
pF
36
ns
20
ns
184
ns
29
ns
1