2SK3426 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For Impedance Conversion In Low Frequency

Silicon Junction FETs (Small Signal)
2SK3426
Silicon N-Channel Junction
For impedance conversion in low frequency
For electret capacitor microphone
I Features
• High mutual conductance g_m
• Low noise voltage of NV
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Drain-source voltage
V_DSO
20
V
Drain-gate voltage
V_DGO
20
V
Drain-source current
I_DSO
2
mA
Drain-gate current
I_DGO
2
mA
Gate-source current
I_GSO
2
mA
Allowable power dissipation
P_D
100
mW
Operating ambient temperature T_opr
−20 to +80
°C
Storage temperature
T_stg
−55 to +125
°C
0.33^{+–00..0025}
3
0.23^{+–00..0025}
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5˚
Unit: mm
0.10^{+–00..0025}
1: Drain
2: Source
3: Gate
SSSMini3-F1 Package
Marking Symbol: 4E
I Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Drain current
Mutual conductance
Noise voltage
Voltage gain
Voltage gain difference
Symbol
Conditions
Min Typ Max Unit
I_D ^*1
V_DS = 2.0 V, R_D = 2.2 kΩ ± 1%
100
330 µA
I_DSS
V_DS = 2.0 V, R_D = 2.2 kΩ ± 1%, V_GS = 0 107
310
g_m
V_D = 2.0 V, V_GS = 0, f = 1 kHz
660 1 300
µS
NV
V_D = 2.0 V, R_D = 2.2 kΩ ± 1%
C_O = 5 pF, A-Curve
8
µV
G_V1
V_D = 2.0 V, R_D = 2.2 kΩ ± 1%
−8.5 −3.0
dB
C_O = 5 pF, e_G = 10 mV, f = 1 kHz
G_V2
V_D = 12 V, R_D = 2.2 kΩ ± 1%
−5.0 − 0.5
C_O = 5 pF, e_G = 10 mV, f = 1 kHz
G_V3
V_D = 1.5 V, R_D = 2.2 kΩ ± 1%
−9.0 −3.5
C_O = 5 pF, e_G = 10 mV, f = 1 kHz
∆G_V. f^*2 V_D = 2.0 V, R_D = 2.2 kΩ ± 1%
0
1.5
C_O = 5 pF, e_G = 10 mV, f = 1 kHz to 70 Hz
G_V2 − G_V1
0
4.0
dB
G_V1 − G_V3
0
1.5
Note) *1: I_D is assured for I_DSS.
*2: ∆GV. f is assured for AQL 0.065%. (the measurement method is used by source-grounded circuit.)
Publication date: April 2002
SJF00033AED
1