2SK3396 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon N-Channel Junction FET

Silicon Junction FETs (Small Signal)
2SK3396
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For infrared sensor
■ Features
• Low gate-source cutoff current I_GSS
• Small capacitance of short-circuit forward transfer capacitance
(common source) C_iss , short-circuit output capacitance (common
source) C_oss , reverse transfer capacitance (common source) C_rss
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Gate-drain voltage (Source open)
Gate-source voltage (Drain open)
Gate current
Drain current
Power dissipation
Channel temperature
Storage temperature
V_GDO
−40
V
V_GSO
−40
V
I_G
10
mA
I_D
1
mA
P_D
100
mW
T_ch
125
°C
T_stg −55 to +125 °C
0.33^{+–00..0025}
3
0.23^{+–00..0025}
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5°
Unit: mm
0.10^{+–00..0025}
1: Source
2: Drain
3: Gate
SSSMini3-F1 Package
Marking Symbol: EB
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Gate-drain surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Forward transfer admittance
Gate-source cutoff voltage
Short-circuit forward transfer capacitance
(Common source)
V_GDS
I_DSS
I_GSS
Y_fs
V_GSC
C_iss
Short-circuit output capacitance
C_oss
(Common source)
Reverse transfer capacitance
C_rss
(Common source)
Conditions
I_G = −10 µA, V_DS = 0
V_DS = 10 V, V_GS = 0
V_GS = −20 V, V_DS = 0
V_DS = 10 V, V_GS = 0, f = 1 kHz
V_DS = 10 V, I_D = 1 µA
V_DS = 10 V, V_GS = 0, f = 1 MHz
V_DS = 10 V, V_GS = 0, f = 1 MHz
V_DS = 10 V, V_GS = 0, f = 1 MHz
Min Typ Max Unit
−40
V
30
200 µA
− 0.5 nA
0.05
mS
−1.3 −3.0
V
1.0
pF
0.4
pF
0.4
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: July 2003
SJF00036AED
1