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2SK3372 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon N-Channel Junction
Silicon Junction FETs (Small Signal)
2SK3372
Silicon N-Channel Junction
For impedance conversion in low frequency
For electret capacitor microphone
I Features
• High mutual conductance gm
• Low noise voltage of NV
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Drain-source voltage
VDSO
20
V
Drain-gate voltage
VDGO
20
V
Drain-source current
IDSO
2
mA
Drain-gate current
IDGO
2
mA
Gate-source current
IGSO
2
mA
Allowable power dissipation
PD
100
mW
Operating ambient temperature Topr
−20 to +80
°C
Storage temperature
Tstg
−55 to +125
°C
0.33+–00..0025
3
0.23+–00..0025
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5˚
Unit: mm
0.10+–00..0025
1: Drain
2: Source
3: Gate
SSSMini3-F1 Package
Marking Symbol: 1H
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Drain current
Mutual conductance
Noise voltage
Voltage gain
Voltage gain difference
Electrostatic discharge *3
Symbol
Conditions
Min Typ Max Unit
ID *1
VDS = 2.0 V, RD = 2.2 kΩ ± 1%
100
460 µA
IDSS
VDS = 2.0 V, RD = 2.2 kΩ ± 1%, VGS = 0 107
470
gm
VD = 2.0 V, VGS = 0, f = 1 kHz
660 1 600
µS
NV
VD = 2.0 V, RD = 2.2 kΩ ± 1%
CO = 5 pF, A-Curve
4
mV
GV1
VD = 2.0 V, RD = 2.2 kΩ ± 1%
−7.5 −4.7
dB
CO = 5 pF, eG = 10 mV, f = 1 kHz
GV2
VD = 12 V, RD = 2.2 kΩ ± 1%
−4.0 −1.5
CO = 5 pF, eG = 10 mV, f = 1 kHz
GV3
VD = 1.5 V, RD = 2.2 kΩ ± 1%
−8.0 −5.0
CO = 5 pF, eG = 10 mV, f = 1 kHz
∆GV. f*2 VD = 2.0 V, RD = 2.2 kΩ ± 1%
0
1.7
CO = 5 pF, eG = 10 mV, f = 1 kHz to 70 Hz
GV2 − GV1
0
4.0
dB
GV1 − GV3
ESD
C = 200 pF, R = 0 Ω
0
±200
1.7
V
Note) *1: ID is assured for IDSS.
*2: ∆GV. f is assured for AQL 0.065%. (the measurement method is used by source-grounded circuit.)
*3: Test method of electrostatic discharge are based on Standard of Electronic Industries Association of Japan EIAJ ED-4701
Environmental and endurance test methods for semiconductor devices. Judgment standard is product specification.
Publication date: April 2002
SJF00032AED
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