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2SK3318 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon N-channel power MOSFET
Power MOSFETs
2SK3318
Silicon N-channel power MOSFET
For switching
15.0±0.3
11.0±0.2
Unit: mm
5.0±0.2
(3.2)
■ Features
• Avalanche energy capability guaranteed
• High-speed switching
• Low ON resistance Ron
• No secondary breakdown
φ 3.2±0.1
2.0±0.2
2.0±0.1
■ Absolute Maximum Ratings TC = 25°C
1.1±0.1
0.6±0.2
Parameter
Symbol Rating
Unit
Drain-source surrender voltage VDSS
600
V
Gate-source surrender voltage
VGSS
±30
V
Drain current
ID
±15
A
Peak drain current
IDP
±60
A
Avalanche energy capability * EAS
112.5
mJ
Power
PD
100
W
dissipation
Ta = 25°C
3
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
Note) *: L = 1 mH, IL = 15 A, 1 pulse
■ Electrical Characteristics TC = 25°C ± 3°C
5.45±0.3
10.9±0.5
123
1: Gate
2: Drain
3: Source
TOP-3F-A1 Package
Internal Connection
D
G
S
Parameter
Symbol
Conditions
Min Typ Max Unit
Gate-drain surrender voltage
Diode forward voltage
Gate threshold voltage
Drain-source cutoff current
Gate-source cutoff currentt
Drain-source on resistance
Forward transfer admittance
Short-circuit forward transfer capacitance
(Common-source)
Short-circuit output capacitance
(Common-source)
Reverse transfer capacitance
(Common-source)
VDSS
VDSF
Vth
IDSS
IGSS
RDS(on)
Yfs
Ciss
Coss
Crss
ID = 1 mA, VGS = 0
IDR = 15 A, VGS = 0
VDS = 25 V, ID = 1 mA
VDS = 480 V, VGS = 0
VGS = ±30 V, VDS = 0
VGS = 10 V, ID = 7.5 A
VDS = 25 V, ID = 7.5 A
VDS = 20 V, VGS = 0, f = 1 MHz
600
V
−1.5
V
2
4
V
10
µA
±1
µA
0.33 0.46
Ω
6
10
S
3 500
pF
340
pF
50
pF
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Channel-case heat resistance
Channel-atmosphere heat resistance
td(on)
tr
td(off)
tf
Rth(ch-c)
Rth(ch-a)
VDD = 150 V, ID = 7.5 A
RL = 20 Ω, VGS = 10 V
40
ns
55
ns
310
ns
70
ns
1.25 °C/W
41.7 °C/W
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2004
SJG00040AED
1
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