2SK3269 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – N-channel enhancement mode MOSFET

Power MOSFETs
2SK3269
N-channel enhancement mode MOSFET
■ Features
• Low on-resistance, low Q_g
• High avalanche resistance
■ Applications
• For PDP
• For high-speed switching
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Avalanche energy capability ^*
V_DSS
100
V
V_GSS
±20
V
I_D
±25
A
I_DP
±100
A
EAS
22.5
mJ
Power dissipation
Channel temperature
Storage temperature
P_D
40
W
T_a = 25°C
1.4
T_ch
150
°C
T_stg −55 to +150 °C
Note) *: L = 0.2 mH, I_L = 15 A, 1 pulse
10.5±0.3
Unit: mm
4.6±0.2
1.4±0.1
1.4±0.1
0.8±0.1
2.54±0.3
2.5±0.2
0 to 0.3
123
(10.2)
(8.9)
1: Gate
2: Drain
3: Source
TO-220C-G1 Package
Marking Symbol: K3269
Internal Connection
D
G
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Drain-source surrender voltage
V_DSS
Gate threshold voltage
V_th
Drain-source cutoff current
I_DSS
Gate-source cutoff current
I_GSS
Drain-source ON resistance
R_DS(on)
Forward transfer admittance
Y_fs
Short-circuit forward transfer capacitance C_iss
(Common-source)
I_D = 1 mA, V_GS = 0
V_DS = 10 V, I_D = 1 mA
V_DS = 80 V, V_GS = 0
V_GS = ±20 V, V_DS = 0
V_GS = 10 V, I_D = 12 A
V_DS = 10 V, I_D = 12 A
V_DS = 10 V, V_GS = 0, f = 1 MHz
Short-circuit output capacitance
C_oss
(Common-source)
Reverse transfer capacitance
C_rss
(Common-source)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t_d(on)
T_r
t_d(off)
t_f
V_DD = 30 V, I_D = 12 A
R_L = 2.5 Ω, V_GS = 10 V
Publication date: March 2004
SJG00032AED
S
Min Typ Max Unit
100
V
2.0
4.0
V
10
µA
±1
µA
70 100 mΩ
6
11
S
960
pF
285
pF
85
pF
15
ns
10
ns
65
ns
35
ns
1