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2SK3268 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon N-channel power MOSFET
Power MOSFETs
2SK3268
Silicon N-channel power MOSFET
■ Features
• Avalanche energy capability guaranteed
• High-speed switching
• Low ON resistance Ron
• No secondary breakdown
• Low-voltage drive
• High electrostatic energy capability
■ Applications
• Non-contact relay
• Solenoid drive
• Motor drive
• Control equipment
• Switching mode regulator
6.5±0.1
5.3±0.1
4.35±0.1
Unit: mm
2.3±0.1
0.5±0.1
4.6±0.1
1.0±0.1
0.1±0.05
0.5±0.1
0.75±0.1
2.3±0.1
(5.3)
(4.35)
(3.0)
123
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Avalanche energy capability *
VDSS
100
V
VGSS
±20
V
ID
±15
A
IDP
±60
A
EAS
22.5
mJ
Power dissipation
Channel temperature
Storage temperature
PD
20
W
Ta = 25°C
1
Tch
150
°C
Tstg −55 to +150 °C
1: Gate
2: Drain
3: Source
EIAJ: SC-63
Marking Symbol: K3268
U-G1 Package
Internal Connection
D
G
Note) *: L = 0.2 mH, IL = 15 A, 1 pulse
■ Electrical Characteristics TC = 25°C ± 3°C
S
Parameter
Symbol
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Diode forward voltage
Short-circuit forward transfer capacitance
(Common source)
VDSS
IDSS
IGSS
Vth
Yfs
RDS(on)
VDF
Ciss
Conditions
ID = 1 mA, VGS = 0
VDS = 80 V, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 12 A
VGS = 10 V, ID = 12 A
IDR = 15 A, VGS = 0
VDS = 10 V, VGS = 0, f = 1 MHz
Min Typ Max Unit
100
V
10
µA
±1
µA
2.0
4.0
V
6
11
S
70 100 mΩ
−1.4
V
960
pF
Short-circuit output capacitance
Coss
(Common source)
285
pF
Reverse transfer capacitance
(Common source)
Turn-on delay time
Rise time
Fall time
Turn-off delay time
Thermal resistance (ch-c)
Thermal resistance (ch-a)
Crss
td(on)
tr
tf
td(off)
Rth(ch-c)
Rth(ch-a)
VDD = 30 V, ID = 12 A, RL = 2.5 Ω
VGS = 10 V
85
pF
15
ns
10
ns
35
ns
65
ns
6.25 °C/W
125 °C/W
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2004
SJG00031AED
1
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