2SK3192 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon N-channel power MOSFET

Power MOSFETs
2SK3192
Silicon N-channel power MOSFET
■ Features
• Avalanche energy capability guaranteed
• High-speed switching
• Low ON resistance R_on
• No secondary breakdown
■ Applications
• PDP
• Switching mode regulator
15.0±0.3
11.0±0.2
Unit: mm
5.0±0.2
(3.2)
φ 3.2±0.1
2.0±0.2
1.1±0.1
2.0±0.1
0.6±0.2
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Avalanche energy capability ^*
V_DSS
250
V
V_GSS
±30
V
I_D
±30
A
I_DP
±120
A
EAS
925
mJ
Power dissipation
Channel temperature
Storage temperature
P_D
100
W
T_a = 25°C
3
T_ch
150
°C
T_stg −55 to +150 °C
Note) _*: L = 1.74 mH, I_L = 30 A, V_DD = 50 V, 1 pulse, T_a = 25°C
5.45±0.3
10.9±0.5
123
1: Gate
2: Drain
3: Source
EIAJ: SC-92
TOP-3F-B1 Package
Marking Symbol: K3192
Internal Connection
D
G
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Short-circuit forward transfer capacitance
(Common source)
V_DSS
I_DSS
I_GSS
V_th
R_DS(on)
Y_fs
C_iss
I_D = 1 mA, V_GS = 0
V_DS = 200 V, V_GS = 0
V_GS = ±30 V, V_DS = 0
V_DS = 10 V, I_D = 1 mA
V_GS = 10 V, I_D = 15 A
V_DS = 10 V, I_D = 15 A
V_DS = 10 V, V_GS = 0, f = 1 MHz
Short-circuit output capacitance
C_oss
(Common source)
Reverse transfer capacitance
C_rss
(Common source)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t_d(on)
t_r
t_d(off)
t_f
V_DD = 100 V, I_D = 15 A, R_L = 6.7 Ω
V_GS = 10 V
S
Min Typ Max Unit
250
V
10
µA
±1
µA
2
4
V
50
68
mΩ
8
15
S
4 200
pF
1 600
pF
650
pF
45
ns
115
ns
330
ns
130
ns
Publication date: January 2004
SJG00029BED
1