2SK3124 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon N-Channel Power F-MOS FET

Power F-MOS FETs
2SK3124
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed
q High-speed switching
q No secondary breakdown
q High electrostatic breakdown voltage
s Applications
q High-speed switching (switching power supply)
q For high-frequency power amplification
s Absolute Maximum Ratings (T_C = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source breakdown voltage V_DSS
400
V
Gate to Source voltage
V_GSS
±20
V
Drain current
DC
I_D
Pulse
I_DP
±0.5
A
±1
A
Avalanche energy capacity
EAS^*
0.25
mJ
Allowable power
dissipation
T_C = 25°C
P_D
Ta = 25°C
10
W
1
Channel temperature
Storage temperature
T_ch
150
°C
T_stg
−55 to +150
°C
* _{L = 2mH, IL = 0.5A, 1 pulse}
s Electrical Characteristics (T_C = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current I_DSS
Gate to Source leakage current I_GSS
Drain to Source breakdown voltage V_DSS
Gate threshold voltage
V_th
Drain to Source ON-resistance R_DS(on)
Forward transfer admittance
| Y_fs |
Diode forward voltage
V_DSF
Input capacitance (Common Source) C_iss
Output capacitance (Common Source) C_oss
Reverse transfer capacitance (Common Source) C_rss
Turn-on time (delay time)
t_d(on)
Rise time
t_r
Fall time
t_f
Turn-off time (delay time)
t_d(off)
Thermal resistance between channel and case R_th(ch-c)
Thermal resistance between channel and atmosphere R_th(ch-a)
V_DS = 320V, V_GS = 0
V_GS = ±20V, V_DS = 0
I_D = 1mA, V_GS = 0
V_DS = 10V, I_D = 1mA
V_GS = 10V, I_D = 0.1A
V_DS = 10V, I_D = 0.1A
I_DR = 0.1A, V_GS = 0
V_DS = 10V, V_GS = 0, f = 1MHz
V_DD = 100V, I_D = 0.1A
V_GS = 10V, R_L = 1Ω
6.5±0.1
5.3±0.1
4.35±0.1
unit: mm
2.3±0.1
0.5±0.1
0.93±0.1
1.0±0.1
0.1±0.05
0.5±0.1
2.3±0.1
4.6±0.1
0.75±0.1
1
2
3
1: Gate
2: Drain
3: Source
U Type Package
min
typ
max
Unit
10
µA
±1
µA
400
V
1
3
V
17
23
Ω
100
160
mS
−1.5
V
48
pF
10
pF
5
pF
65
ns
35
ns
40
ns
70
ns
12.5 °C/W
125
°C/W
1