2SK3064 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon N-Channel MOS FET

Silicon MOS FETs (Small Signal)
2SK3064
Silicon N-Channel MOS FET
Secondary battery pack (Li ion battery, etc.)
For switching
s Features
q High-speed switching
q S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
q Low-voltage drive (V_th: −1 to 2V)
q Low Ron
unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
V_DS
V_GSO
I_D
I_DP
P_D
T_ch
T_stg
30
V
±20
V
100
mA
200
mA
150
mW
150
°C
−55 to +150
°C
0.2±0.1
1: Gate
2: Source
3: Drain
EIAJ: SC-70
S-Mini Type Package (3-pin)
Marking Symbol: 2D
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain current
Gate cut-off current
Gate threshold voltage
I_DSS
V_DS = 30V, V_GS = 0
I_GSS
V_GS = ±20V, V_DS = 0
V_th
V_DS = 5V, I_D = 1µA
0.1
µA
±1
µA
1
2
V
Forward transfer admittance
| Y_fs |
V_DS = 5V, I_D = 10mA
15
mS
Drain to source ON-resistance R_DS(on) V_DS = 5V, I_D = 10mA
30
50
Ω
Turn-on time
t_on
V_DD = 5V, V_GS = 0 to 5V, R_L = 200Ω
150
ns
Turn-off time
t_off
V_DD = 5V, V_GS = 0 to 5V, R_L = 200Ω
35
ns
1