2SK3045 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon N-Channel Power F-MOS FET

Power F-MOS FETs
2SK3045
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 15.6mJ
q V_GSS = ±30V guaranteed
q High-speed switching: t_f = 35ns
q No secondary breakdown
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
s Absolute Maximum Ratings (T_C = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source breakdown voltage V_DSS
500
V
Gate to Source voltage
V_GSS
±30
V
Drain current
DC
I_D
Pulse
I_DP
±2.5
A
±10
A
Avalanche energy capacity
EAS^*
15.6
mJ
Allowable power
dissipation
T_C = 25°C
Ta = 25°C ^PD
30
W
2
Channel temperature
Storage temperature
T_ch
150
°C
T_stg
−55 to +150
°C
* _{L = 5mH, IL = 2.5A, VDD = 50V, 1 pulse}
s Electrical Characteristics (T_C = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current I_DSS
Gate to Source leakage current I_GSS
Drain to Source breakdown voltage V_DSS
Gate threshold voltage
V_th
Drain to Source ON-resistance R_DS(on)
Forward transfer admittance
| Y_fs |
Diode forward voltage
V_DSF
Input capacitance (Common Source) C_iss
Output capacitance (Common Source) C_oss
Reverse transfer capacitance (Common Source) C_rss
Turn-on time (delay time)
t_d(on)
Rise time
t_r
Turn-off time (delay time)
t_d(off)
Fall time
t_f
V_DS = 400V, V_GS = 0
V_GS = ±30V, V_DS = 0
I_D = 1mA, V_GS = 0
V_DS = 25V, I_D = 1mA
V_GS = 10V, I_D = 1.5A
V_DS = 25V, I_D = 1.5A
I_DR = 2.5A, V_GS = 0
V_DS = 20V, V_GS = 0, f = 1MHz
V_GS = 10V, I_D = 1.5A
V_DD = 150V, R_L = 100Ω
9.9±0.3
unit: mm
4.6±0.2
2.9±0.2
φ3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.3
1 2 3 _5.08±0.5
1: Gate
2: Drain
3: Source
TO-220D Package
min
typ
max
Unit
0.1
mA
±1
µA
500
V
2
5
V
3.2
4
Ω
1
1.5
S
−1.5
V
330
pF
55
pF
20
pF
15
ns
25
ns
55
ns
30
ns
1