2SK3036 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon N-Channel Power F-MOS FET

Power F-MOS FETs
2SK3036
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed
q High-speed switching
q Low ON-resistance
q No secondary breakdown
q Low-voltage drive
q High electrostatic breakdown voltage
6.5±0.1
5.3±0.1
4.35±0.1
unit: mm
2.3±0.1
0.5±0.1
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
s Absolute Maximum Ratings (T_C = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source breakdown voltage V_DSS
150
V
Gate to Source voltage
V_GSS
±20
V
Drain current
DC
I_D
Pulse
I_DP
±6
A
±12
A
Avalanche energy capacity
EAS^*
3.6
mJ
Allowable power
dissipation
T_C = 25°C
P_D
Ta = 25°C
20
W
1
Channel temperature
Storage temperature
T_ch
150
°C
T_stg
−55 to +150
°C
* _{L = 0.1mH, IL = 6A, 1 pulse}
0.93±0.1
1.0±0.1
0.1±0.05
0.5±0.1
2.3±0.1
4.6±0.1
0.75±0.1
1
2
3
Internal Connection
G
1: Gate
2: Drain
3: Source
U Type Package
D
S
s Electrical Characteristics (T_C = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current I_DSS
Gate to Source leakage current I_GSS
Drain to Source breakdown voltage V_DSS
Gate threshold voltage
V_th
Drain to Source ON-resistance
R_DS(on)1
R_DS(on)2
Forward transfer admittance
| Y_fs |
Diode forward voltage
V_DSF
Input capacitance (Common Source) C_iss
Output capacitance (Common Source) C_oss
Reverse transfer capacitance (Common Source) C_rss
Turn-on time
t_on
Turn-off time (delay time)
t_d(off)
Fall time
t_f
V_DS = 120V, V_GS = 0
V_GS = ±20V, V_DS = 0
I_D = 1mA, V_GS = 0
V_DS = 10V, I_D = 1mA
V_GS = 10V, I_D = 3A
V_GS = 4V, I_D = 3A
V_DS = 10V, I_D = 3A
I_DR = 6A, V_GS = 0
V_DS = 10V, V_GS = 0, f = 1MHz
V_DD = 100V, I_D = 3A
V_GS = 10V, R_L = 33Ω
min
typ
max
Unit
10
µA
±10
µA
150
V
1
2.5
V
300
450
mΩ
340
510
mΩ
4.2
S
−1.6
V
300
pF
76
pF
40
pF
80
ns
920
ns
250
ns
1