2SK3028 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon N-Channel Power F-MOS FET

Power F-MOS FETs
2SK3028 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed
q High-speed switching
q Low ON-resistance
q No secondary breakdown
q Low-voltage drive
q High electrostatic breakdown voltage
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
s Absolute Maximum Ratings (T_C = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source breakdown voltage V_DSS
60
V
Gate to Source voltage
V_GSS
±20
V
Drain current
DC
I_D
Pulse
I_DP
±100
A
±200
A
Avalanche energy capacity
EAS^*
500
mJ
Allowable power
dissipation
T_C = 25°C
Ta = 25°C ^PD
100
W
3
Channel temperature
Storage temperature
T_ch
150
°C
T_stg
−55 to +150
°C
* _{L = 0.1mH, IL = 100A, 1 pulse}
s Electrical Characteristics (T_C = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current I_DSS
Gate to Source leakage current I_GSS
Drain to Source breakdown voltage V_DSS
Gate threshold voltage
V_th
Drain to Source ON-resistance
R_DS(on)1
R_DS(on)2
Forward transfer admittance
| Y_fs |
Diode forward voltage
V_DSF
Input capacitance (Common Source) C_iss
Output capacitance (Common Source) C_oss
Reverse transfer capacitance (Common Source) C_rss
Turn-on time (delay time)
t_d(on)
Rise time
t_r
Fall time
t_f
Turn-off time (delay time)
t_d(off)
Thermal resistance between channel and case R_th(ch-c)
Thermal resistance between channel and atmosphere R_th(ch-a)
V_DS = 50V, V_GS = 0
V_GS = ±20V, V_DS = 0
I_D = 1mA, V_GS = 0
V_DS = 10V, I_D = 1mA
V_GS = 10V, I_D = 50A
V_GS = 4V, I_D = 50A
V_DS = 10V, I_D = 50A
I_DR = 50A, V_GS = 0
V_DS = 10V, V_GS = 0, f = 1MHz
V_DD = 30V, I_D = 50A
V_GS = 10V, R_L = 0.6Ω
unit: mm
15.5±0.5
φ3.2±0.1
3.0±0.3
5˚
5˚
4.0
2.0±0.2
1.1±0.1
5.45±0.3
5˚
5˚
5˚
5˚
5.45±0.3
0.7±0.1
123
1: Gate
2: Drain
3: Source
TOP-3E Package
Internal Connection
D
G
S
min
typ
max
Unit
10
µA
±10
µA
60
V
1
2.5
V
5
7.5
mΩ
6.5
10
mΩ
50
100
S
−1.2
V
9400
pF
3300
pF
1800
pF
40
ns
280
ns
830
ns
2400
ns
1.25 °C/W
41.7 °C/W
1