2SK1374G0L Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon N-channel MOSFET

This product complies with the RoHS Directive (EU 2002/95/EC).
Silicon MOSFETs (Small Signal)
2SK1374G
Silicon N-channel MOSFET
For switching circuits
■ Features
• High-speed switching
/ _{• Wide frequency band}
• Incorporating a built-in gate protection-diode
• Allowing 2.5 V drive
ce _{ge. ■ Absolute Maximum Ratings Ta = 25°C}
n ^{d sta Parameter}
Symbol Rating
Unit
cle _{Drain-source voltage}
a ^e lifecy ^{Gate-source voltage (Drain open)}
t Drain current
n ^{u uc Peak drain current}
rod _{Power dissipation}
te ^{tin r P Channeltemperature}
g ^{fou e . Storage temperature}
V_DS
50
V
V_GSO
10
V
I_D
50
mA
I_DP
100
mA
P_D
150
mW
T_ch
150
°C
T_stg −55 to +150 °C
■ Package
• Code
SMini3-F2
• Marking Symbol: 4V
• Pin Name
1: Gate
2: Source
3: Drain
in ^{n followin nce type d ation ■ Electrical Characteristics Ta = 25°C}
es tena ^{typ type form / Parameter}
Symbol
Conditions
Min Typ Max Unit
a ^{o lud in ce d t in /en Drain-source surrender voltage}
c _ed ^inc _ed ^ma _tenan ^{tinue type lates o.jp Drain-source cutoff current}
M _is tinu ^{lan ain con ed ut ic.c Gate-source cutoff current}
p ^m dis tinu ^{bo on Gate threshold voltage}
con ^{ed on L a nas Forward transfer admittance}
is _lan ^{isc UR .pa Drain-source ON resistance}
e/D ^{p d ing on Short-circuit forward transfer capacitance}
ic _{(Common source)}
V_DSS
I_DSS
I_GSS
V_th
Y_fs
R_DS(on)
C_iss
I_D = 10 µA, V_GS = 0
V_DS = 20 V, V_GS = 0
V_GS = 10 V, V_DS = 0
I_D = 100 µA, V_DS = 5 V
I_D = 10 mA, V_DS = 5 V, f = 1 kHz
I_D = 10 mA, V_GS = 2.5 V
V_DS = 5 V, V_GS = 0, f = 1 MHz
50 100
V
1.0
µA
1.0
µA
0.5 0.8 1.1
V
20 39
mS
27 50
Ω
4.5
pF
D_{tenanc follow .sem Short-circuit output capacitance}
C_oss
in ^{it w (Common source)}
4.1
pF
Ma e ^{vis ://ww Reverse transfer capacitance}
C_rss
(Common source)
1.2
pF
as ttp _{Turn-on time} *1, 2
Ple ^h _{Turn-off time} *1, ²
t_on
V_DD = 5 V, R_L = 470 Ω, V_GS = 0 V to 2.5 V
0.2
µs
t_off
V_DD = 5 V, R_L = 470 Ω, V_GS = 2.5 V to 0 V
0.2
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*1: Pulse measurement
*2: ^ton ^{, t}off ^{test circuit}
V_OUT
470 Ω
90%
10%
V_IN
V_GS = 2.5 V
50 Ω
100 µF
V_DD = 5 V
V_OUT
10%
90%
t_on
t_off
Publication date:June 2007
SJF00063AED
1