2SK1374 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon N-Channel MOS FET

Silicon MOS FETs (Small Signal)
2SK1374
Silicon N-Channel MOS FET
For switching
s Features
q High-speed switching
q Wide frequency band
q Incorporating a built-in gate protection-diode
q Allowing 2.5V drive
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
V_DS
V_GSO
I_D
I_DP
P_D
T_ch
T_stg
50
V
10
V
50
mA
100
mA
150
mW
150
°C
−55 to +150
°C
unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
0.2±0.1
1: Gate
2: Source
3: Drain
EIAJ: SC-70
S-Mini Type Package (3-pin)
Marking Symbol: 4V
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
I_DSS
I_GSS
V_DSS
V_th
R_DS(on)*1
| Y_fs |
V_DS = 20V, V_GS = 0
V_GS = 10V, V_DS = 0
I_D = 10µA, V_GS = 0
I_D = 100µA, V_DS = 5V
I_D = 10mA, V_GS = 2.5V
I_D = 10mA, V_DS = 5V, f = 1kHz
1
µA
1
µA
50
100
V
0.5
0.8
1.1
V
27
50
Ω
20
39
mS
Input capacitance (Common Source) C_iss
4.5
pF
Output capacitance (Common Source) C_oss
V_DS = 5V, V_GS = 0, f = 1MHz
4.1
pF
Reverse transfer capacitance (Common Source) C_rss
1.2
pF
Turn-on time
t_on*2
V_DD = 5V, V_GS = 0 to 2.5V, R_L = 470Ω
0.2
µs
Turn-off time
t_off*2
V_DD = 5V, V_GS = 2.5 to 0V, R_L = 470Ω
0.2
µs
*1 _{Pulse measurement}
*2 _{ton, toff measurement circuit}
V_GS = 2.5V
50Ω
V_{out 470Ω}
V_in
V_DD = 5V
V_out
10%
90%
10%
90%
t_on
t_off
1