2SK123 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon N-Channel Junction FET

Silicon Junction FETs (Small Signal)
2SK123
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
s Features
q High mutual conductance g_m
q Low noise voltage of NV
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source voltage
Drain to Gate voltage
Drain to Source current
Drain to Gate current
Gate to Source current
Allowable power dissipation
Operating ambient temperature
Storage temperature
V_DSO
V_DGO
I_DSO
I_DGO
I_GSO
P_D
T_opr
T_stg
20
V
20
V
2
mA
2
mA
2
mA
200
mW
−20 to +80
°C
−55 to +150
°C
unit: mm
2.4±0.1
5.8−+00..32
1.5−+00..0255
1.9±0.1
1
3
2
1: Drain
2: Source
3: Gate
Mini Flat Package (3-pin)
Marking Symbol: 1H
Note: For the forming type, (Y) is indicated after the part No.
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Current consumption
I_D
Drain to Source cut-off current I_DSS
V_D = 4.5V, C_O = 10pF, R_D = 2.2kΩ ± 1% 100
V_DS = 4.5V, V_GS = 0
95
600
µA
480
µA
Mutual conductance
Noise figure
Voltage gain
Voltage gain difference
g_m
V_D = 4.5V, V_GS = 0, f = 1kHz
0.7
1.6
mS
NV
V_D = 4.5V, R_D = 2.2kΩ ± 1%
C_O = 10pF, A-curve
4
µV
V_D = 4.5V, R_D = 2.2kΩ ± 1%
G_V1
−3
2
dB
C_O = 10pF, e_G = 10mV, f = 1kHz
V_D = 12V, R_D = 2.2kΩ ± 1%
G_V2
C_O = 10pF, e_G = 10mV, f = 1kHz
0
3.3
dB
G_V3
V_D = 1.5V, R_D = 2.2kΩ ± 1%
−4.5
− 0.3
dB
C_O = 10pF, e_G = 10mV, f = 1kHz
∆|G_V2 − G_V1|
0
+3.5
dB
∆|G_V1 − G_V3|
0
+3.5
dB
1