2SK1104 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon N-Channel Junction FET

Silicon Junction FETs (Small Signal)
2SK1104
Silicon N-Channel Junction FET
For switching
Complementary to 2SJ164
s Features
q Low ON-resistance
q Low-noise characteristics
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Gate to Drain voltage
V_GDS
−65
V
Drain current
I_D
20
mA
Gate current
I_G
10
mA
Allowable power dissipation
P_D
300
mW
Channel temperature
Storage temperature
T_ch
150
°C
T_stg
−55 to +150
°C
4.0±0.2
unit: mm
marking
123
1.27 1.27
1: Source
2.54±0.15
2: Gate
3: Drain
EIAJ: SC-72
New S Type Package
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Drain to Source cut-off current I_DSS*
Gate to Source leakage current I_GSS
Gate to Drain voltage
V_GDS
Gate to Source cut-off voltage V_GSC
Forward transfer admittance
| Y_fs |
Drain to Source ON-resistance R_DS(on)
Input capacitance (Common Source) C_iss
Output capacitance (Common Source) C_oss
Reverse transfer capacitance (Common Source) C_rss
Conditions
V_DS = 10V, V_GS = 0
V_GS = −30V, V_DS = 0
I_G = −10µA, V_DS = 0
V_DS = 10V, I_D = 10µA
V_DS = 10V, I_D = 1mA, f = 1kHz
V_DS = 10mV, V_GS = 0
V_DS = 10V, V_GS = 0, f = 1MHz
min
typ
max
Unit
0.2
6
mA
−10
nA
−65
V
−1.5
−3.5
V
1.8
2.5
mS
250
Ω
7
pF
1.3
pF
1.5
pF
* _{IDSS rank classification}
Runk
O
I_DSS (mA)
0.2 to 1
P
0.6 to 1.5
Q
1 to 3
R
2.5 to 6
1