2SK1103 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon N-Channel Junction FET

Silicon Junction FETs (Small Signal)
2SK1103
Silicon N-Channel Junction FET
For switching
Complementary to 2SJ163
s Features
q Low ON-resistance
q Low-noise characteristics
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Gate to Drain voltage
V_GDS
−65
V
Drain current
I_D
20
mA
Gate current
I_G
10
mA
Allowable power dissipation
P_D
150
mW
Channel temperature
Storage temperature
T_ch
150
°C
T_stg
−55 to +150
°C
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
unit: mm
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1: Source
2: Drain
3: Gate
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package (3-pin)
Marking Symbol (Example): 4L
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Drain to Source cut-off current I_DSS*
Gate to Source leakage current I_GSS
Gate to Drain voltage
V_GDS
Gate to Source cut-off voltage V_GSC
Forward transfer admittance
| Y_fs |
Drain to Source ON-resistance R_DS(on)
Input capacitance (Common Source) C_iss
Reverse transfer capacitance (Common Source) C_rss
Conditions
V_DS = 10V, V_GS = 0
V_GS = −30V, V_DS = 0
I_G = −10µA, V_DS = 0
V_DS = 10V, I_D = 10µA
V_DS = 10V, I_D = 1mA, f = 1kHz
V_DS = 10mV, V_GS = 0
V_DS = 10V, V_GS = 0, f = 1MHz
min
typ
max
Unit
0.2
6
mA
−10
nA
−65
V
−1.5
−3.5
V
1.8
2.5
mS
300
Ω
7
pF
1.5
pF
* _{IDSS rank classification}
Runk
O
I_DSS (mA)
Marking Symbol
0.2 to 1
4LO
P
0.6 to 1.5
4LP
Q
1 to 3
4LQ
R
2.5 to 6
4LR
1