2SK0665 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon MOS FETs

Silicon MOS FETs (Small Signal)
2SK0665 (2SK665)
Silicon N-Channel MOS FET
For switching
0.3⁺_–00..01
unit: mm
0.15⁺_{–00..0150}
I Features
G High-speed switching
G Small drive current owing to high input inpedance
G High electrostatic breakdown voltage
3
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
V_DS
V_GSO
I_D
I_DP
P_D
T_ch
T_stg
20
V
8
V
100
mA
200
mA
150
mW
150
°C
−55 to +150
°C
10°
1: Gate
2: Source
3: Drain
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: 3O
Internal Connection
D
R₁
G
R₂
S
I Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current I_DSS
V_DS = 10V, V_GS = 0
Gate to Source leakage current I_GSS
V_GS = 8V, V_DS = 0
40
Drain to Source breakdown voltage V_DSS
I_D = 100µA, V_GS = 0
20
Gate threshold voltage
V_th
I_D = 100µA, V_DS = V_GS
1.5
Drain to Source ON-resistance R_DS(on)*3 I_D = 20mA, V_GS = 5V
Forward transfer admittance
| Y_fs |
I_D = 20mA, V_DS = 5V, f = 1kHz
20
High level output voltage
V_OH
V_DD = 5V, V_GS = 1V, R_L = 200Ω
4.5
Low level output voltage
Input resistance
Turn-on time
Turn-off time
V_SL
V_DD = 5V, V_GS = 5V, R_L = 200Ω
R₁ + R_2*1
100
t_on*2
V_DD = 5V, V_GS = 0 to 5V, R_L = 200Ω
t_off*2
V_DD = 5V, V_GS = 5 to 0V, R_L = 200Ω
10
µA
80
µA
V
3.5
V
50
Ω
mS
V
1
V
200
kΩ
1
µs
1
µs
*1 _{Resistance ratio R1/R2 = 1/50} *2 _{ton, toff measurement circuit} *3 _{Pulse measurement}
V_{out 200Ω}
90%
V_GS = 5V
50Ω
V_in
V_DD = 5V
V_out
10%
10%
90%
t_on
t_off
Note) The part number in the parenthesis shows conventional part number.
291