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2SK0664 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For Switching | |||
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Silicon MOS FETs (Small Signal)
2SK0664 (2SK664)
Silicon N-Channel MOS FET
For switching
I Features
G High-speed switching
G S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
VDSS
VGSO
ID
IDP
PD
Tch
Tstg
50
V
8
V
100
mA
200
mA
150
mW
150
°C
â55 to +150
°C
0.3+â00..01
3
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
10°
unit: mm
0.15+â00..0150
1: Gate
2: Source
3: Drain
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: 3N
Internal Connection
D
G
S
I Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current IDSS
VDS = 10V, VGS = 0
10
µA
Gate to Source leakage current IGSS
VGS = 8V, VDS = 0
50
µA
Drain to Source breakdown voltage VDSS
ID = 100µA, VGS = 0
50
V
Gate threshold voltage
Vth
ID = 100µA, VDS = VGS
1.5
3.5
V
Drain to Source ON-resistance RDS(on) ID = 20mA, VGS = 5V
50
â¦
Forward transfer admittance
| Yfs |
ID = 20mA, VDS = 5V, f = 1kHz
20
mS
Input capacitance (Common Source) Ciss
15
pF
Output capacitance (Common Source) Coss
VDS = 5V, VGS = 0, f = 1kHz
5
pF
Reverse transfer capacitance (Common Source) Crss
1
pF
Turn-on time
ton*
VDD = 5V, VGS = 0 to 5V, RL = 200â¦
10
ns
Turn-off time
toff*
VDD = 5V, VGS = 5 to 0V, RL = 200â¦
20
ns
* ton, toff measurement circuit
Vout 200â¦
90%
VGS = 5V
50â¦
Vin
VDD = 5V
Vout
10%
10%
90%
ton
toff
Note) The part number in the parenthesis shows conventional part number.
289
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