2SK0663 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For Low-Frequency Amplification

Silicon Junction FETs (Small Signal)
2SK0663 (2SK663)
Silicon N-Channel Junction FET
For low-frequency amplification
For switching
I Features
G Low noise-figure (NF)
G High gate to drain voltage V_GDO
G S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source voltage
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Junction temperature
Storage temperature
V_DSX
V_GDO
V_GSO
I_D
I_G
P_D
T_j
T_stg
55
V
−55
V
−55
V
30
mA
10
mA
150
mW
125
°C
−55 to +125
°C
0.3^{+–00..01}
3
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
10°
unit: mm
0.15^{+–00..0150}
1: Source
2: Drain
3: Gate
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol (Example): 2B
I Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
I_DSS*
I_GSS
V_GDS
V_GSC
V_DS = 10V, V_GS = 0
V_GS = −30V, V_DS = 0
I_G = 100µA, V_DS = 0
V_DS = 10V, I_D = 10µA
1
12
mA
−10
nA
55
80
V
−5
V
Mutual conductance
g_m
V_DS = 10V, I_D = 5mA, f = 1kHz
2.5
7.5
mS
Input capacitance (Common Source) C_iss
Reverse transfer capacitance (Common Source) C_rss
V_DS = 10V, V_GS = 0, f = 1MHz
6.5
pF
1.9
pF
Noise figure
V_DS = 10V, V_GS = 0, R_g = 100kΩ
NF
2.5
dB
f = 100Hz
* _{IDSS rank classification}
Runk
P
I_DSS (mA)
Marking Symbol
1 to 3
2BP
Q
2 to 6.5
2BQ
R
5 to 12
2BR
Note) The part number in the parenthesis shows conventional part number.
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