2SK0656 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For Switching

Silicon MOS FETs (Small Signal)
2SK0656 (2SK656)
Silicon N-Channel MOS FET
For switching
I Features
G High-speed switching
G Small drive current owing to high input inpedance
G High electrostatic breakdown voltage
4.0±0.2
2.0±0.2
unit: mm
0.75 max.
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
V_DSS
V_GSO
I_D
I_DP
P_D
T_ch
T_stg
50
V
8
V
100
mA
200
mA
200
mW
150
°C
−55 to +150
°C
0.45^{+–00..1200}
(2.5) (2.5)
0.45^{+–00..1200}
0.7±0.1
123
Internal Connection
R₁
G
R₂
1: Source
2: Drain
3: Gate
NS-B1 Package
D
S
I Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current I_DSS
V_DS = 10V, V_GS = 0
Gate to Source leakage current I_GSS
V_GS = 8V, V_DS = 0
40
Drain to Source breakdown voltage V_DSS
I_D = 100µA, V_GS = 0
50
Gate threshold voltage
V_th
I_D = 100µA, V_DS = V_GS
1.5
Drain to Source ON-resistance R_DS(on) I_D = 20mA, V_GS = 5V
10
µA
80
µA
V
3.5
V
50
Ω
Forward transfer admittance
| Y_fs |
I_D = 20mA, V_DS = 5V, f = 1kHz
20
35
mS
High level output voltage
V_OH
V_DD = 5V, V_GS = 1V, R_L = 200Ω
4.5
V
Low level output voltage
V_OL
V_DD = 5V, V_GS = 5V, R_L = 200Ω
1
V
Input resistance
R₁ + R_2*1
100
200
kΩ
Input capacitance (Common Source) C_iss
9
pF
Output capacitance (Common Source) C_oss
V_DS = 10V, V_GS = 0, f = 1MHz
4.5
pF
Reverse transfer capacitance (Common Source) C_rss
Turn-on time
t_on*2
Turn-off time
t_off*2
*1 _{Resistance ratio R1/R2 = 1/50}
*2 _{Pulse measurement}
V_DD = 5V, V_GS = 0 to 5V, R_L = 200Ω
V_DD = 5V, V_GS = 5 to 0V, R_L = 200Ω
1.1
pF
1
µs
1
µs
Note) The part number in the parenthesis shows conventional part number.
285