2SK0655 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For Switching

Silicon MOS FETs (Small Signal)
2SK0655 (2SK655)
Silicon N-Channel MOS FET
For switching
I Features
G High-speed switching
G Allowing to supply with the radial taping
4.0±0.2
2.0±0.2
unit: mm
0.75 max.
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
V_DS
V_GSO
I_D
I_DP
P_D
T_ch
T_stg
50
V
8
V
100
mA
200
mA
200
mW
150
°C
−55 to +150
°C
0.45^{+–00.1.200}
(2.5) (2.5)
0.45^{+–00.1.200}
0.7±0.1
123
Internal Connection
G
1: Source
2: Drain
3: Gate
NS-B1 Package
D
S
I Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current I_DSS
V_DS = 10V, V_GS = 0
Gate to Source leakage current I_GSS
V_GS = 8V, V_DS = 0
Drain to Source breakdown voltage V_DSS
I_D = 100µA, V_GS = 0
50
Gate threshold voltage
V_th
I_D = 100µA, V_DS = V_GS
1.5
Drain to Source ON-resistance R_DS(on) I_D = 20mA, V_GS = 5V
10
µA
50
µA
V
3.5
V
50
Ω
Forward transfer admittance
| Y_fs |
I_D = 20mA, V_DS = 5V, f = 1kHz
20
35
mS
Input capacitance (Common Source) C_iss
10
15
pF
Output capacitance (Common Source) C_oss
V_DS = 5V, V_GS = 0, f = 1MHz
4
5
pF
Reverse transfer capacitance (Common Source) C_rss
Turn-on time
t_on*
Turn-off time
t_off*
V_DD = 5V, V_GS = 0 to 5V, R_L = 200Ω
V_DD = 5V, V_GS = 5 to 0V, R_L = 200Ω
0.5
1
pF
10
ns
20
ns
* _{ton, toff measurement circuit}
V_GS = 5V
50Ω
V_{out 200Ω}
V_in
V_DD = 5V
V_out
10%
90%
10%
90%
t_on
t_off
Note) The part number in the parenthesis shows conventional part number.
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