2SK0614 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For switching

Silicon MOS FETs (Small Signal)
2SK0614 (2SK614)
Silicon N-Channel MOS FET
For switching
I Features
G Low ON-resistance R_DS(on)
G High-speed switching
G Allowing to be driven directly by CMOS and TTL
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
V_DS
V_GSO
I_D
I_DP
P_D
T_ch
T_stg
80
V
20
V
±0.5
A
±1
A
750
mW
150
°C
−55 to +150
°C
5.0±0.2
unit: mm
4.0±0.2
0.7±0.1
0.45⁺_{–00..115}
2.5⁺_–00..26
2.5⁺_–00..26
0.45⁺_{–00..115}
1 23
1: Source
2: Drain
3: Gate
JEDEC: TO-92
EIAJ: SC-43
TO-92-A1 Package
I Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current I_DSS
Gate to Source leakage current I_GSS
Drain to Source breakdown voltage V_DSS
Gate threshold voltage
Drain to Source ON-resistance
V_th
R_DS(on)*1
Forward transfer admittance
| Y_fs |
Input capacitance (Common Source) C_iss
Output capacitance (Common Source) C_oss
Reverse transfer capacitance (Common Source) C_rss
Turn-on time
t_on*2
Turn-off time
t_off*2
*1 _{Pulse measurement}
*2 _{ton, toff measurement circuit}
V_DS = 60V, V_GS = 0
V_GS = 20V, V_DS = 0
I_DS = 100µA, V_GS = 0
I_D = 1mA, V_DS = V_GS
I_D = 0.5A, V_GS = 10V
I_D = 0.2A, V_DS = 15V, f = 1kHz
V_DS = 10V, V_GS = 0, f = 1MHz
V_in = 10V
t = 1µS
f = 1MHZ
50Ω
V_out
V_in
68Ω
V_DD = 30V
V_out
10% ^Vin
90% _Vout
t_on
10%
90%
t_off
min
typ
max
Unit
10
µA
0.1
µA
80
V
1.5
3.5
V
2
4
Ω
300
mS
45
pF
30
pF
8
pF
15
ns
20
ns
Note) The part number in the parenthesis shows conventional part number.
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