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2SJ364 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon P-Channel Junction FET | |||
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Silicon Junction FETs (Small Signal)
2SJ364
Silicon P-Channel Junction FET
For analog switch
s Features
q Low ON-resistance
q Low-noise characteristics
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
VGDS
ID
IG
PD
Tch
Tstg
65
V
â20
mA
â10
mA
150
mW
150
°C
â55 to +150
°C
unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
0.2±0.1
1: Source
2: Drain
3: Gate
EIAJ: SC-70
S-Mini Type Package (3-pin)
Marking Symbol (Example): 4M
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current IDSS*
VDS = â10V, VGS = 0
â 0.2
â6
mA
Gate to Source leakage current IGSS
VGS = 30V, VDS = 0
10
nA
Gate to Drain voltage
VGDS
IG = 10µA, VDS = 0
65
V
Gate to Source cut-off voltage VGSC
VDS = â10V, ID = â10µA
1.5
3.5
V
Forward transfer admittance
| Yfs |
VDS = â10V, ID = â1mA, f = 1kHz
1.8
2.5
mS
Drain to Source ON-resistance RDS(on) VDS = â10mV, VGS = 0
300
â¦
Input capacitance (Common Source) Ciss
Reverse transfer capacitance (Common Source) Crss
VDS = â10V, VGS = 0, f = 1MHz
12
pF
4
pF
* IDSS rank classification
Runk
O
P
IDSS (mA) â 0.2 to â1 â 0.6 to â1.5
Marking Symbol 4MO
4MP
Q
â1 to â3
4MQ
R
â2.5 to â6
4MR
1
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