2SJ163 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon P-Channel Junction FET

Silicon Junction FETs (Small Signal)
2SJ163
Silicon P-Channel Junction FET
For general switching
Complementary to 2SK1103
s Features
q Low ON-resistance
q Low-noise characteristics
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
V_GDS
I_D
I_G
P_D
T_ch
T_stg
65
V
−20
mA
−10
mA
150
mW
150
°C
−55 to +150
°C
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
unit: mm
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1: Source
2: Drain
3: Gate
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package (3-pin)
Marking Symbol (Example): 4M
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current I_DSS*
V_DS = −10V, V_GS = 0
− 0.2
−6
mA
Gate to Source leakage current I_GSS
V_GS = 30V, V_DS = 0
10
nA
Gate to Drain voltage
V_GDS
I_G = 10µA, V_DS = 0
65
V
Gate to Source cut-off voltage V_GSC
V_DS = −10V, I_D = −10µA
1.5
3.5
V
Forward transfer admittance
| Y_fs |
V_DS = −10V, I_D = −1mA, f = 1kHz
1.8
2.5
mS
Drain to Source ON-resistance R_DS(on) V_DS = −10mV, V_GS = 0
300
Ω
Input capacitance (Common Source) C_iss
Reverse transfer capacitance (Common Source) C_rss
V_DS = −10V, V_GS = 0, f = 1MHz
12
pF
4
pF
* _{IDSS rank classification}
Runk
O
P
I_DSS (mA) − 0.2 to −1 − 0.6 to −1.5
Marking Symbol 4MO
4MP
Q
−1 to −3
4MQ
R
−2.5 to −6
4MR
1