2SJ0536 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon P-Channel MOS FET

Silicon MOS FETs (Small Signal)
2SJ0536
Silicon P-Channel MOS FET
Secondary battery pack (Li ion battery, etc.)
For switching
s Features
q High-speed switching
q S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
q Low-voltage drive (V_th: −1 to 2V)
q Low Ron
unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source voltage
V_DS
−30
V
Gate to Source voltage
Drain current
Max drain current
V_GSO
I_D
I_DP
±20
V
−100
mA
−200
mA
Allowable power dissipation
P_D
150
mW
Channel temperature
Storage temperature
T_ch
150
°C
T_stg
−55 to +150
°C
0.2±0.1
1: Gate
2: Source
3: Drain
EIAJ: SC-70
S-Mini Type Package (3-pin)
Marking Symbol: 2C
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
Drain current
I_DSS
V_DS = −30V, V_GS = 0
Gate cut-off current
I_GSS
V_GS = ±20V, V_DS = 0
Gate threshold voltage
V_th
V_DS = −5V, I_D = −1µA
−1
Forward transfer admittance
| Y_fs |
V_DS = −5V, I_D = −10mA
8
Drain to source ON-resistance R_DS(on) V_GS = −5V, I_D = −10mA
Turn-on time
t_on
V_DD = −5V, V_GS = −5 to 0V, R_L = 200Ω
Turn-off time
t_off
V_DD = −5V, V_GS = −5 to 0V, R_L = 200Ω
typ
max
Unit
− 0.1
µA
±1
µA
−2
V
mS
50
75
Ω
100
µs
25
µs
1