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2SJ0163 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For General Switching | |||
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Silicon Junction FETs (Small Signal)
2SJ0163 (2SJ163)
Silicon P-Channel Junction FET
For general switching
Complementary to 2SK1103
s Features
q Low ON-resistance
q Low-noise characteristics
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
VGDS
ID
IG
PD
Tch
Tstg
65
V
â20
mA
â10
mA
150
mW
150
°C
â55 to +150
°C
0.40+â00..0150
3
1
2
(0.95) (0.95)
1.9±0.1
2.90+â00..0250
10Ë
Unit: mm
0.16+â00..0160
1: Source
2: Drain
3: Gate
JEDEC: TO-236
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol (Example): 4M
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current IDSS*
VDS = â10 V, VGS = 0
â 0.2
â6
mA
Gate to Source leakage current IGSS
VGS = 30 V, VDS = 0
10
nA
Gate to Drain voltage
VGDS
IG = 10 µA, VDS = 0
65
V
Gate to Source cut-off voltage VGSC
VDS = â10 V, ID = â10 µA
1.5
3.5
V
Forward transfer admittance
| Yfs |
VDS = â10 V, ID = â1 mA, f = 1 kHz 1.8
2.5
mS
Drain to Source ON-resistance RDS(on) VDS = â10 mV, VGS = 0
300
â¦
Input capacitance (Common Source) Ciss
VDS = â10 V, VGS = 0, f = 1 MHz
12
pF
Reverse transfer capacitance (Common Source) Crss
4
pF
* IDSS rank classification
Runk
O
P
IDSS (mA) â 0.2 to â1 â 0.6 to â1.5
Marking Symbol 4MO
4MP
Q
â1 to â3
4MQ
R
â2.5 to â6
4MR
Publication date: January 2002
Note) The part number in the parenthesis shows conventional part number.
SJF00001BED
1
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