2SD973 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency power amplification)

Transistor
2SD973, 2SD973A
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
s ^Features
q Low collector to emitter saturation voltage V_CE(sat).
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
6.9±0.1
1.5
1.5 R0.9
R0.9
2.5±0.1
1.0
s ^{Absolute Maximum Ratings (Ta=25˚C)}
0.85
Parameter
Symbol
Ratings
Unit
Collector to 2SD973
30
base voltage 2SD973A
V_CBO
60
V
Collector to 2SD973
25
emitter voltage 2SD973A
V_CEO
50
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
1.5
A
Collector current
I_C
1
A
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
s ^{Electrical Characteristics (Ta=25˚C)}
0.55±0.1
3
2
1
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base 2SD973
voltage
2SD973A
I_CBO
V_CBO
V_CB = 20V, I_E = 0
I_C = 10µA, I_E = 0
0.1
µA
30
V
60
Collector to emitter 2SD973
25
V_CEO
I_C = 2mA, I_B = 0
V
voltage
2SD973A
50
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
V_EBO
h_FE1*1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
*1_{hFE1 Rank classification}
I_E = 10µA, I_C = 0
5
V
V_CE = 10V, I_C = 500mA^*2
85
160 340
V_CE = 5V, I_C = 1A^*2
50
100
I_C = 500mA, I_B = 50mA^*2
0.2
0.4
V
I_C = 500mA, I_B = 50mA^*2
0.85
1.2
V
V_CB = 10V, I_E = –50mA, f = 200MHz
200
MHz
V_CB = 10V, I_E = 0. f = 1MHz
11
20
pF
*2 _{Pulse measurement}
Rank
Q
R
S
h_FE1
85 ~ 170 120 ~ 240 170 ~ 340
1