2SD968 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency driver amplification)

Transistor
2SD968, 2SD968A
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Complementary to 2SB789 and 2SB789A
Unit: mm
s ^Features
q High collector to emitter voltage V_CEO.
q Large collector power dissipation P_C.
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to 2SD968
100
V_CBO
V
base voltage 2SD968A
120
Collector to 2SD968
100
emitter voltage 2SD968A
V_CEO
120
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
1
A
Collector current
I_C
0.5
A
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
s ^{Electrical Characteristics (Ta=25˚C)}
4.5±0.1
1.6±0.2
1.5±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : W^(2SD968)
V^(2SD968A)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector to emitter 2SD968
100
V_CEO
I_C = 100µA, I_B = 0
V
voltage
2SD968A
120
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
V_EBO
h_FE1*1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
*1_{hFE1 Rank classification}
I_E = 10µA, I_C = 0
5
V
V_CE = 10V, I_C = 150mA^*2
90
220
V_CE = 5V, I_C = 500mA^*2
50
100
I_C = 500mA, I_B = 50mA^*2
0.2
0.6
V
I_C = 500mA, I_B = 50mA^*2
0.85
1.2
V
V_CB = 10V, I_E = –50mA, f = 200MHz
120
MHz
V_CB = 10V, I_E = 0, f = 1MHz
11
20
pF
*2 _{Pulse measurement}
Rank
Q
R
h_FE1
Marking ^2SD968
Symbol
2SD968A
90 ~ 155
WQ
VQ
130 ~ 220
WR
VR
1