2SD958 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high breakdown voltage and low-noise amplification)

Transistor
2SD958
Silicon NPN epitaxial planer type
For high breakdown voltage and low-noise amplification
Complementary to 2SB788
s ^Features
q High collector to emitter voltage V_CEO.
q Low noise voltage NV.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
120
V
Collector to emitter voltage V_CEO
120
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
50
mA
Collector current
I_C
20
mA
Collector power dissipation P_C
400
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
3
2
1
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
I_CBO
I_CEO
V_CBO
V_CEO
V_EBO
h_FE*
V_CE(sat)
f_T
Noise voltage
NV
V_CB = 50V, I_E = 0
100
nA
V_CE = 50V, I_B = 0
1
µA
I_C = 10µA, I_E = 0
120
V
I_C = 1mA, I_B = 0
120
V
I_E = 10µA, I_C = 0
7
V
V_CE = 5V, I_C = 2mA
180
700
I_C = 20mA, I_B = 2mA
0.6
V
V_CB = 5V, I_E = –2mA, f = 200MHz
200
MHz
V_CE = 40V, I_C = 2mA, G_V = 80dB
R_g = 100kΩ, Function = FLAT
150
mV
*_{hFE Rank classification}
Rank
R
h_FE
180 ~ 360
S
260 ~ 520
T
360 ~ 700
1